Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
393 words
A high frequency bipolar transistor with integral thermally compensated degenerative feedback resistance comprising: A. a semiconductor body having at least one major surface; said body having an epitaxial layer adjoining the major surface, and having substrate portion adjoining the epitaxial layer interior of the body, said substrate portion having an impurity concentration therethrough of greater than about 1 X 1018 carriers/cm3 of a given carrier-type; B. emitter, base and collector regions in said epitaxial layer; said emitter region adjoining the major surface of the body in at least one strip configuration and having an impurity concentration at the surface of at least about 1 X 1018 carriers/cm3 of a carrier-type the same as the carrier-type of said substrate portion; said collector region adjoining the substrate portion, adjoining the major surface spaced from the emitter region, having a thickness of less than about 10 microns at active portions thereof, and having an impurity concentration at active portions of less than about 1 X 1014 carriers/cm3 of a carrier-type the same as the carrier-type of the substrate portion; and said base region being between the emitter and collector regions, adjoining the major surface at least peripherally of the emitter region in an elongated configuration, having a thickness of less than about 2 microns at active portions thereof, having an impurity concentration at the active portions between about 5 X 1014 and 5 X 1017 carriers/cm3 of a carrier-type opposite at the carrier-type of the emitter and collector regions to form PN junctions therewith; C. first, second and third metal contacts of strip configurations on the major surface of the body being spaced apart and substantially parallel and making separate ohmic contact to the emitter, base and collector regions, respectively; D. a dielectric layer on the major surface at least adjacent said first metal contact to the emitter region; E. a conductor layer of strip configuration on the dielectric layer spaced from and extending substantially parallel to said first metal contact; and F. a degenerative resistor layer on the first metal contact, the dielectric layer, and the conductor layer extending substantially the length of the first metal contact and conductor layer and making ohmic contact to both the first metal contact and the conductor layer along the length thereof, while remaining substantially insulated from the second and third metal contacts and the base and collector regions.
Claim 2
Dependent Claim
393 words
A high frequency bipolar transistor with integral thermally compensated degenerative feedback resistance comprising: A. a semiconductor body having at least one major surface; said body having an epitaxial layer adjoining the major surface, and having substrate portion adjoining the epitaxial layer interior of the body, said substrate portion having an impurity concentration therethrough of greater than about 1 X 1018 carriers/cm3 of a given carrier-type; B. emitter, base and collector regions in said epitaxial layer; said emitter region adjoining the major surface of the body in at least one strip configuration and having an impurity concentration at the surface of at least about 1 X 1018 carriers/cm3 of a carrier-type the same as the carrier-type of said substrate portion; said collector region adjoining the substrate portion, adjoining the major surface spaced from the emitter region, having a thickness of less than about 10 microns at active portions thereof, and having an impurity concentration at active portions of less than about 1 X 1014 carriers/cm3 of a carrier-type the same as the carrier-type of the substrate portion; and said base region being between the emitter and collector regions, adjoining the major surface at least peripherally of the emitter region in an elongated configuration, having a thickness of less than about 2 microns at active portions thereof, having an impurity concentration at the active portions between about 5 X 1014 and 5 X 1017 carriers/cm3 of a carrier-type opposite at the carrier-type of the emitter and collector regions to form PN junctions therewith; C. first, second and third metal contacts of strip configurations on the major surface of the body being spaced apart and substantially parallel and making separate ohmic contact to the emitter, base and collector regions, respectively; D. a dielectric layer on the major surface at least adjacent said first metal contact to the emitter region; E. a conductor layer of strip configuration on the dielectric layer spaced from and extending substantially parallel to said first metal contact; and F. a degenerative resistor layer on the first metal contact, the dielectric layer, and the conductor layer extending substantially the length of the first metal contact and conductor layer and making ohmic contact to both the first metal contact and the conductor layer along the length thereof, while remaining substantially insulated from the second and third metal contacts and the base and collector regions.
Claim 3
Dependent Claim
46 words
A high frequency bipolar transistor with integral thermally compensated degenerative feedback resistance as set forth in claim 1 wherein: the first metal contact is in two spaced apart substantially parallel strip configurations and the conductor layer is spaced between the strips of the first metal contact.
Claim 4
Dependent Claim
39 words
A high frequency bipolar transistor with integral thermally compensated degenerative feedback resistance as set forth in claim 1 wherein: the resistance layer makes ohmic contact to the first metal contact only adjacent edge portions opposite from the conductor layer.
Claim 5
Dependent Claim
119 words
A high frequency bipolar transistor with integral thermally compensated degenerative feedback resistance as set forth in claim 1 comprising in addition: G. a second conductor layer of strip configuration on the dielectric layer spaced from the second metal contact and extending substantially parallel to the second metal contact; and H. a second resistor layer on the second metal contact, the dielectric layer, and the second conductor layer extending substantially the length of the second metal contact and conductor layer and making ohmic contact to both the second metal contact and the second conductor layer along the length thereof, while remaining substantially insulated from the first and third metal contacts, the first conductor layer and the emitter and collector regions.