US3868274A
Expired / Lapsed
US
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Method for fabricating MOS devices with a multiplicity of thresholds on a semiconductor substrate
Assignee: Arris Technology Inc
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Filing: 1974-01-02
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Granted: 1975-02-25
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Expires: 1994-01-02
Abstract
Abstract The process includes the steps of doping selected portions of the substrate with a dopant of conductivity-determining type opposite the conductivity type of the substrate to form source and drain regions for a plurality of semiconductor devices. A first conductivity-determining type impurity is then introduced into the substrate at the surface thereof in regions corresponding to a first set of selected devices and not in regions corresponding to a second set of selected devices. A second conductivity type determining impurity is then introduced into the substrate of the surface thereof in regions corresponding to the second set of selected devices. The second conductivity type determining impurity is also introduced in regions corresponding to at least some of the first set of selected devices. There may be a third set of selected devices where neither of the conductivity type determining impurities are introduced. The source, drain and gate electrodes for each devices are then formed. Preferably, the introduction of the conductivity type determining impurities is achieved by means of ion implantation. The resulting substrate may have devices having as many as four different threshold voltages depending upon which, if any, of the impurities are implanted in the channel regions of the particular devices. By controlling the relative impurity concentrations, the threshold voltages of the devices may be accurately determined. Further, the implantation procedures perform the additional function of doping the field areas to substantially reduce parasitic transistor action between the devices caused by field inversion.
Inventors
- 👤 Robert J Hubar
- 👤 Kent F Smith
- 👤 James N Fordemwalt
- 👤 John W Hanson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:48
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/84; H10D99/00; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/053
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
118 words
A PROCESS FOR FORMING METAL OXIDE SEMICONDUCTOR DEVICES HAVING A MULTIPLICITY OF THRESHOLD VOLTAGES ON A SINGLE SEMICONDUCTOR SUBSTRATE COMPRISING THE STEPS OF DOPING SELECTED PORTIONS OF THE EXPOSED SUBSTRATE WITH A DOPANT OF CONDUCTIVITVDETERMINING TYPE OPPOSITE THE CONDUCTIVITY TYPE OF THE SUBSTRATE TO FORM SOURCE AND DRAIN REGIONS FOR A PLURALITY OF SEMICONDUCTOR DEVICES, INTRODUCING A FIRST CONDUCTIVITYDETERMINING TYPE IMPURITY INTO THE SUBSTRATE AT THE SURFACE THEREOF IN REGIONS CORRESPONDING TO FIRST SELECTED DEVICES, AND NOT IN REGIONS CORRESPONDING TO SEND SELEECTED DEVICES, AND INTRODUCING A SECOND CONDUCTIVITY TYPE DETERMINING IMPURITY INTO THE SUBSTRATE AT THE SURFACE THEREOF IN REGIONS CORRESPONDING TO SAID SECOND SELECTED DEVICES, AND FORMING THE SOURCE, DRAIN AND GATE ELECTRODES FOR EACH DEVICE.
Claim 2
Dependent Claim
118 words
A PROCESS FOR FORMING METAL OXIDE SEMICONDUCTOR DEVICES HAVING A MULTIPLICITY OF THRESHOLD VOLTAGES ON A SINGLE SEMICONDUCTOR SUBSTRATE COMPRISING THE STEPS OF DOPING SELECTED PORTIONS OF THE EXPOSED SUBSTRATE WITH A DOPANT OF CONDUCTIVITVDETERMINING TYPE OPPOSITE THE CONDUCTIVITY TYPE OF THE SUBSTRATE TO FORM SOURCE AND DRAIN REGIONS FOR A PLURALITY OF SEMICONDUCTOR DEVICES, INTRODUCING A FIRST CONDUCTIVITYDETERMINING TYPE IMPURITY INTO THE SUBSTRATE AT THE SURFACE THEREOF IN REGIONS CORRESPONDING TO FIRST SELECTED DEVICES, AND NOT IN REGIONS CORRESPONDING TO SEND SELEECTED DEVICES, AND INTRODUCING A SECOND CONDUCTIVITY TYPE DETERMINING IMPURITY INTO THE SUBSTRATE AT THE SURFACE THEREOF IN REGIONS CORRESPONDING TO SAID SECOND SELECTED DEVICES, AND FORMING THE SOURCE, DRAIN AND GATE ELECTRODES FOR EACH DEVICE.
Claim 3
Dependent Claim
33 words
In the process of claim 1, also introducing said second conductivity type determining impurity into the substrate at the surface thereof in regions corresponding to at least some of said first selected devices.
Claim 4
Dependent Claim
21 words
The process of claim 2, in which there are third selected devices where neither of said conductivity determining impurities are introduced.
Claim 5
Dependent Claim
21 words
The process of claim 1, in which there are third selected devices where neither of said conductivity determining impurities are introduced.
Claim 6
Dependent Claim
42 words
The method of claim 1 wherein the step of introducing a conductivity type impurity comprises the steps of covering the substrate with an appropriately configured ion implantation mask and exposing the surface of the unit to a beam of conductivity-determining type ions.
Claim 7
Dependent Claim
16 words
The method according to claim 1 wherein said first conductivity-determining type impurity is a P-type dopant.
Claim 8
Dependent Claim
12 words
The method of claim 6 wherein said P-type dopant comprises boron ions.
Claim 9
Dependent Claim
15 words
The method of claim 1 wherein said second conductivity-determining type impurity is an N-type dopant.
Claim 10
Dependent Claim
12 words
The method of claim 8 wherein said N-type dopant comprises phosphorous ions.
Claim 11
Dependent Claim
16 words
The method according to claim 8 wherein said first conductivity-determining type impurity is a P-type dopant.
Claim 12
Dependent Claim
12 words
The method of claim 9 wherein said P-type dopant comprises boron ions.
Claim 13
Dependent Claim
38 words
The process of claim 1 wherein first, second, and third devices having three different threshold voltages are formed and wherein said first selected deviceS comprise said first device and wherein said second selected devices comprise said second device.
Claim 14
Dependent Claim
42 words
The process of claim 2 wherein first, second, and third devices having three different threshold voltages are formed and wherein said first selected devices comprise said first and second device and wherein said second selected devices comprise said second and third device.
Claim 15
Dependent Claim
41 words
The process of claim 2 wherein first, second, and third devices having three different threshold voltages are formed and wherein said first selected devices comprise said first device and wherein said second selected devices comprise said first and said second device.
Claim 16
Dependent Claim
41 words
The process of claim 2 wherein first, second, and third devices having three different threshold voltages are formed and wherein said first selected devices comprise said first and said second device and wherein said second selected devices comprise said second device.
Claim 17
Dependent Claim
39 words
The process of claim 2 wherein first and second devices having two different threshold voltages are formed and wherein said first selected devices comprises said first device and said second selected devices comprises said first and said second device.
Claim 18
Dependent Claim
36 words
The process of claim 2 wherein first and second devices having two different threshold voltages are formed and wherein said first selected devices comprises said second device and said second selected devices comprise said second device.
Claim 19
Dependent Claim
40 words
The process of claim 2 wherein first and second devices having two different threshold voltages are formed and wherein said first selected devices comprise said first and said second device and wherein said second selected devices comprise said first device.
Claim 20
Dependent Claim
174 words
A process for forming four metal oxide semiconductor devices on a single semiconductor substrate, each of the devices having a different threshold voltage comprising the steps of forming a first insulating layer on the surface of the substrate, removing portions of the first insulating layer to form a pair of spaced openings therein for each device to be formed, doping the exposed substrate to form source and drain regions for each device, forming a second insulating layer on the unit, covering the channel regions of the third and fourth devices with an implantation mask and exposing the unit to a beam of P-type determining ions, removing the mask, removing the insulating layers in the channel regions of each of the devices growing an oxide layer in the channel region of each device, covering the second and fourth devices with an ion implantation mask, exposing the unit to a beam of N-type determining ions, and forming the source, drain and gate electrodes for each device, whereby each of the devices has a different threshold voltage.
Claim 21
Dependent Claim
174 words
A process for forming four metal oxide semiconductor devices on a single semiconductor substrate, each of the devices having a different threshold voltage comprising the steps of forming a first insulating layer on the surface of the substrate, removing portions of the first insulating layer to form a pair of spaced openings therein for each device to be formed, doping the exposed substrate to form source and drain regions for each device, forming a second insulating layer on the unit, covering the channel regions of the third and fourth devices with an implantation mask and exposing the unit to a beam of P-type determining ions, removing the mask, removing the insulating layers in the channel regions of each of the devices growing an oxide layer in the channel region of each device, covering the second and fourth devices with an ion implantation mask, exposing the unit to a beam of N-type determining ions, and forming the source, drain and gate electrodes for each device, whereby each of the devices has a different threshold voltage.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-24 | 1978-08-26 | 1979-02-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-24 | 1982-08-26 | 1983-02-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-24 | 1986-08-26 | 1987-02-25 | $7700.00 | Window Closed / Lapsed |