Process of producing a thin film circuit

Claim 1

A PROCESS OF PRODUCING A C-R THIN FILM CIRCUIT WHICH COMPRISES THE STEPS OF: A. DEPOSITING AN ELECTRICALLY CONDUCTIVE THIN FILM ON AN INSULATING SUBSTRATE, SAID THIN CONDUCTIVE FILM BEING SELECTED FROM THE GROUP CONSISTING OF TANTALUM NITRIDE, TANTALUM, NIOBIUM, AND HAFNIUM; B. COATING ONTO SAID CONDUCTIVE FILM AN OXIDATION PREVENTING MASK, SAID MASK COATING HAVNG A PATTERN CORRESPONDING TO THE CONTOUR OF THE THIN FILM ELEMENT DESIRED TO BE FORMED ON SAID CONDUCTIVE THIN FILM; C. OXIDIZING PORTIONS OF SAID CONDUCTIVE THIN FILM NOT COATED WITH SAID OXIDATION PREVENTING MASK TO PRODUCT AN INSULATING OXIDE FILM LAYER WHICH HAS A THICKNESS LARGER THAN THAT OF SAID CONDUCTIVE THIN FILM AND INSULATES THE MASKCOATED PORTIONS OF SAID CONDUCTIVE THIN FILM AT SIDE SURFACES THEREOF; D. REMOVING SAID OXIDATION PREVENTING MASK TO EXPOSE THE PORTIONS OF SAID CONDUCTIVE THIN FILM AT UPPER SURFACES THEREOF, SAID EXPOSED PORTIONS OF SAID CONDUCTIVE THIN FILM WHICH HAVE NOT BEEN OXIDIZED BEING INSULATED AT SAID SIDE SURFACES WITH SAID INSULATING OXIDE FILM LAYER; E. ANODIZING THE UPPER SURFACE OF SAID NONOXIDEZED CONDUCTIVE FILM TO FORM A THIN FILM DIELECTRIC LAYER OVER THE REMAINING NON-OXIDIZED CONDUCTIVE FILM; AND, F. DEPOSITING A METAL FILM IN A PREDETERMINED PATTERN ON SAID DIELECTRIC LAYER TO FORM A THIN FILM CAPACITOR ELEMENT.