Patent US3865652A successfully refreshed from Google Patents.
US3865652A
Expired / Lapsed
US
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Method of forming self-aligned field effect transistor and charge-coupled device
Assignee: International Business Machines Corp
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Filing: 1973-10-05
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Granted: 1975-02-11
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Expires: 1993-10-05
Abstract
Abstract A semiconductor device containing in a single semiconductor body a self-aligned Field Effect Transistor and a Charge-Coupled Array having an improved capacity for storing charges. The device is formed by depositing both polysilicon and silicon nitride layers over a silicon dioxide layer on the surface of a silicon body and selectively etching these layers so that suitable dopants may be diffused or ion-implanted into selected areas of the underlying silicon body to form, in the same semiconductor body, an improved charge-coupled array having an improved self-aligned Field Effect Transistor associated therewith. This process not only results in a device in which the chance of an inversion layer under the oxide on the surface of the device is substantially reduced, but also provides a self-aligned Field Effect Transistor having a thinner gate oxide and a charge-coupled array that has an increased capacity for storing charges. The improved array so formed also has, during operation, zero spaced depletion regions so that unwanted electrical discontinuities between or within the depletion regions of the charge-coupled array are avoided. Because zero spacing is achieved by using these thin conducting layers, the metal phase lines can be made narrow thus leaving openings in the charge transfer channel making the device particularly suitable for imaging applications.
Inventors
- 👤 Benjamin Agusta
- 👤 Joseph J Chang
- 👤 Madhukar L Joshi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 18:08
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/472; H10D62/00; H10D62/10; H10D62/17; H10D62/213; H10D62/335; H10D84/00; H10D84/01; H10D84/0198; H10D84/02; H10D84/03; H10D84/038; H10D84/891; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/053; Y10S148/114; Y10S148/122
Claims Analysis
Total Claims: 55
Claim 1
Independent Claim
24 words
A method of making a semiconductor device having diffused regions in a semiconductor body which comprises selecting a semiconductor body of uniform conductivity type
Claim 2
Independent Claim
24 words
A method of making a semiconductor device having diffused regions in a semiconductor body which comprises selecting a semiconductor body of uniform conductivity type
Claim 3
Dependent Claim
7 words
forming an insulating layer on the body
Claim 4
Dependent Claim
7 words
forming an insulating layer on the body
Claim 5
Dependent Claim
26 words
growing a first, thin, 600 Angstrom thick, layer of silicon dioxide on the surface of the body by heating the body in the presence of oxygen,
Claim 6
Dependent Claim
26 words
growing a first, thin, 600 Angstrom thick, layer of silicon dioxide on the surface of the body by heating the body in the presence of oxygen,
Claim 7
Dependent Claim
32 words
depositing a 150 Angstrom thick diffusion formed layer of silicon nitride on the silicon dioxide layer by heating the body to 900*C in the gas stream of hydrogen containing silane and ammonia,
Claim 8
Dependent Claim
32 words
depositing a 150 Angstrom thick diffusion formed layer of silicon nitride on the silicon dioxide layer by heating the body to 900*C in the gas stream of hydrogen containing silane and ammonia,
Claim 9
Independent Claim
192 words
A method of forming a charge coupled device having an increased capacity for storing charge therein which comprises the steps of, growing a layer of a first insulating material on the surface of a semiconductor body of a selected conductivity type and impurity concentration, depositing a layer of semiconductor material on said insulating layer, coating said layer of semiconductor material with a layer of dielectric material having an etchant characteristic different from said layer of semiconductor material, forming a patterned mask on said layer of dielectric material providing a series of windows over said dielectric material, removing the dielectric material and the semiconductive material under each of said windows by sequentially etching said layers, diffusing impurities of the same conductivity type as said body into said body under each of said windows, removing the remaining portions of said layer of dielectric material, growing a second layer of insulating material, of the same type as said first insulating material, in each of said windows, coating said second layer in each window with a conductive material, and forming electrical connections between a coating on one of said second layers and an adjacent semiconductive layer.
Claim 10
Independent Claim
192 words
A method of forming a charge coupled device having an increased capacity for storing charge therein which comprises the steps of, growing a layer of a first insulating material on the surface of a semiconductor body of a selected conductivity type and impurity concentration, depositing a layer of semiconductor material on said insulating layer, coating said layer of semiconductor material with a layer of dielectric material having an etchant characteristic different from said layer of semiconductor material, forming a patterned mask on said layer of dielectric material providing a series of windows over said dielectric material, removing the dielectric material and the semiconductive material under each of said windows by sequentially etching said layers, diffusing impurities of the same conductivity type as said body into said body under each of said windows, removing the remaining portions of said layer of dielectric material, growing a second layer of insulating material, of the same type as said first insulating material, in each of said windows, coating said second layer in each window with a conductive material, and forming electrical connections between a coating on one of said second layers and an adjacent semiconductive layer.
Claim 11
Dependent Claim
8 words
forming a silicon layer on said insulating layer
Claim 12
Dependent Claim
8 words
forming a silicon layer on said insulating layer
Claim 13
Dependent Claim
9 words
forming a silicon nitride layer over the silicon layer
Claim 14
Dependent Claim
9 words
forming a silicon nitride layer over the silicon layer
Claim 15
Dependent Claim
27 words
The method of claim 2 wherein said patterned mask is configured with windows that provide an isolated region in said layer of semiconductive material adjacent each window.
Claim 16
Dependent Claim
45 words
epitaxially growing a 2,000 Angstrom thick layer of polycrystalline silicon containing 1016 impurities of the same conductivity type as said body on the silicon nitride layer by heating the body to 900*C in the presence of a decomposed silane gas contained in a hydrogen stream,
Claim 17
Dependent Claim
45 words
epitaxially growing a 2,000 Angstrom thick layer of polycrystalline silicon containing 1016 impurities of the same conductivity type as said body on the silicon nitride layer by heating the body to 900*C in the presence of a decomposed silane gas contained in a hydrogen stream,
Claim 18
Dependent Claim
16 words
depositing a second layer of silicon nitride 600 Angstroms in thickness, on the polycrystalline silicon layer,
Claim 19
Dependent Claim
16 words
depositing a second layer of silicon nitride 600 Angstroms in thickness, on the polycrystalline silicon layer,
Claim 20
Dependent Claim
26 words
The method of claim 3 wherein said coating on each second layer in each window is electrically connected to an adjacent isolated region of semiconductive material.
Claim 21
Dependent Claim
8 words
etching away portions of the silicon nitride layer
Claim 22
Dependent Claim
8 words
etching away portions of the silicon nitride layer
Claim 23
Dependent Claim
14 words
etching away the portions of the silicon layer exposed through the silicon nitride layer,
Claim 24
Dependent Claim
14 words
etching away the portions of the silicon layer exposed through the silicon nitride layer,
Claim 25
Dependent Claim
35 words
The method of claim 4 wherein said first insulating layer is silicon dioxide, said layer of semiconductive material is polycrystalline silicon, said dielectric material is silicon nitride and said second insulative material is silicon dioxide.
Claim 26
Dependent Claim
18 words
pyrolytically depositing a second 3,000 Angstroms thick layer of silicon dioxide on the second layer of silicon nitride,
Claim 27
Dependent Claim
18 words
pyrolytically depositing a second 3,000 Angstroms thick layer of silicon dioxide on the second layer of silicon nitride,
Claim 28
Dependent Claim
11 words
placing a layer of photoresist on said layer of silicon dioxide,
Claim 29
Dependent Claim
11 words
placing a layer of photoresist on said layer of silicon dioxide,
Claim 30
Dependent Claim
56 words
The method of claim 5 wherein there is further provided the step of depositing a dielectric material on the surface of said layer of first insulating layer and before said layer of semiconductive material is deposited and the step of etching the dielectric material below the layer of semiconductor material before diffusing impurities into said body.
Claim 31
Dependent Claim
32 words
diffusing impurities of a conductivity type opposite to that of the body through the etched away portions of the silicon nitride and silicon layer into the insulating layer and underlying semiconductor body
Claim 32
Dependent Claim
32 words
diffusing impurities of a conductivity type opposite to that of the body through the etched away portions of the silicon nitride and silicon layer into the insulating layer and underlying semiconductor body
Claim 33
Dependent Claim
19 words
THE METHOD OF CLAIM 6 WHEREIN SAID LAYER OF SEMICONDUCTOR MATERIAL IS RENDERED CONDUCTIVE WHILE IT IS BEING DEPOSITED.
Claim 34
Dependent Claim
48 words
removing said second layer of silicon dioxide and said first and second layers of silicon nitride and the polysilicon layer to form openings in said layers under each of the windows in said photo mask by sequentially eTching said layers and to form spaced apart islands of polysilicon,
Claim 35
Dependent Claim
48 words
removing said second layer of silicon dioxide and said first and second layers of silicon nitride and the polysilicon layer to form openings in said layers under each of the windows in said photo mask by sequentially eTching said layers and to form spaced apart islands of polysilicon,
Claim 36
Dependent Claim
5 words
removing the silicOn nitride layer
Claim 37
Dependent Claim
5 words
removing the silicOn nitride layer
Claim 38
Independent Claim
18 words
A method of forming in a semiconductor body of uniform conductivity type a charge coupled device which comprises
Claim 39
Independent Claim
18 words
A method of forming in a semiconductor body of uniform conductivity type a charge coupled device which comprises
Claim 40
Dependent Claim
11 words
making contact to the diffused regions and to the silicon layer.
Claim 41
Dependent Claim
11 words
making contact to the diffused regions and to the silicon layer.
Claim 42
Dependent Claim
42 words
diffusing impurities of the same conductivity type as said body into the portions of the body underlying each of the openings to form regions in said body housing a concentration of impurities of between 1017 and 1018 impurity atoms per cubic centimeter,
Claim 43
Dependent Claim
42 words
diffusing impurities of the same conductivity type as said body into the portions of the body underlying each of the openings to form regions in said body housing a concentration of impurities of between 1017 and 1018 impurity atoms per cubic centimeter,
Claim 44
Dependent Claim
11 words
growing 3,000 Angstrom thick plugs of silicon dioxide in said openings,
Claim 45
Dependent Claim
11 words
growing 3,000 Angstrom thick plugs of silicon dioxide in said openings,
Claim 46
Dependent Claim
25 words
removing the remaining portions of said second layer of silicon dioxide and said second layer of silicon nitride to expose the islands of polycrystalline silicon,
Claim 47
Dependent Claim
25 words
removing the remaining portions of said second layer of silicon dioxide and said second layer of silicon nitride to expose the islands of polycrystalline silicon,
Claim 48
Dependent Claim
6 words
masking the exposed polycrystalline silicon islands,
Claim 49
Dependent Claim
6 words
masking the exposed polycrystalline silicon islands,
Claim 50
Dependent Claim
20 words
depositing a layer of conductive material 300 to 500 Angstroms in thickness on said plugs by an RF sputtering technique,
Claim 51
Dependent Claim
20 words
depositing a layer of conductive material 300 to 500 Angstroms in thickness on said plugs by an RF sputtering technique,
Claim 52
Dependent Claim
8 words
removing the mask on the polycrystalline silicon, and
Claim 53
Dependent Claim
8 words
removing the mask on the polycrystalline silicon, and
Claim 54
Dependent Claim
37 words
forming a series of electrodes over said conductive material and said polycrystalline silicon islands each electrode of the series electrically, connecting together a layer of conductive material on one of said plugs and one of said islands.
Claim 55
Dependent Claim
37 words
forming a series of electrodes over said conductive material and said polycrystalline silicon islands each electrode of the series electrically, connecting together a layer of conductive material on one of said plugs and one of said islands.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1978-02-10 | 1978-08-12 | 1979-02-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1982-02-10 | 1982-08-12 | 1983-02-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1986-02-10 | 1986-08-12 | 1987-02-11 | $7700.00 | Window Closed / Lapsed |