Multitarget sequential sputtering apparatus

Claim 2

A sputtering apparatus comprising: a chamber for containing an inert gas at a selected pressure; a single stationary cathode in said chamber said cathode having means to support a plurality of different target materials connected thereto; a rotatable anode in said chamber spaced apart from said cathode along a chamber axis and having selected area means for supporting a plurality of substrates; a plurality of spaced apart elements supported between said anode and said cathode, each element defining a plurality of apertures, whereby each of said targets is exposable through a different set of apertures of said plates to a selected area of said anode aligned with the target-material along a different axis parallel to said chamber axis; power means for applying a potential difference across said anode and cathode to ionize said gas to form plasma containing gas ions and electrons, said ions striking said targets to dislodge neutral material particles therefrom, at least some of which are directed to said anode; potential means for controlling the potentials of said elements so as to control the ionization current of each plasma between each target and directed to said anode through a different set of apertures of said elements, said plates and apertures being spaced between said anode and cathode whereby when the selected area of said anode is aligned with a first of said targets only neutral material particles from said first target reach said selected area, with neutral material particles from either or both said first and second elements reaching said selected anode area continuously as said anode is rotated and the selected anode area is moved from alignment with said first target to alignment with said second target.

Claim 3

The apparatus as described in claim 1 further including rotatable apertured shutter means adjacent said anode positionable in a first position to inhibit the neutral material particles from any of said targets from reaching said selected anode area and positionable in any one of other positions so as to expose said selected anode area to the neutral material particles of at least one of said targets.

Claim 4

The apparatus as described in claim 2 wherein said plurality of elements includes a second group of apertured elements spaced apart between the element of said first group most remote from said cathode toward said anode, with said potential means applying a different potential to each of said second group of elements.

Claim 5

The apparatus as described in claim 3 further including a separate biasable ring in the path of each plasma extending from a different target and means for controlling the ring potential to control the plasma ionization current and thereby separately control the rate of sputtering of each target.

Claim 6

The apparatus as described in claim 4 wherein the element of said second group closest to said anode is at the anode potential and each succeeding element of said second group positioned toward said cathode is at a decreasing potential with respect to the anode potential.

Claim 7

The apparatus as described in claim 1 wherein said plurality of elements includes a first group of elements adjacent to said cathode and spaced toward said anode, and connected to said potential means to the anode potential so as to confine the plasma from each target to extend toward the anode through a different set of apertures of said elements.

Claim 8

The apparatus as described in claim 6 wherein said plurality of elements includes a second group of apertured elements spaced apart between the element of said first group most remote from said cathode toward said anode, with said potential means applying a different potential to each of said second group of elements.

Claim 9

The apparatus as described in claim 7 wherein the element of said second group closest to said anode is at the anode potential and each succeeding element of said second group positioned toward said cathode is at a decreaSing potential with respect to the anode potential.

Claim 10

The apparatus as described in claim 6 further including a separate biasable ring in the path of each plasma extending from a different target and means for controlling the ring potential to control the plasma ionization current and thereby separately control the rate of sputtering of each target.

Claim 11

A sputtering apparatus for use in depositing on a substrate a plurality of layers of different materials, with the interface between adjacent layers consisting of only materials of the two adjacent layers comprising: a chamber for containing an inert gas at a selected low pressure; a single stationary cathode in said chamber, said cathode having means for supporting at least first and second target materials each having an exposed surface and defining a center; a rotatable anode in said chamber spaced apart from said cathode along a chamber axis for supporting a substrate thereon; a plurality of elements spaced apart from one another and disposed between said anode and cathode, each element defining first and second apertures, the first apertures of said elements defining a periphery of a first column extending from said first target to said anode along a first axis parallel to said chamber axis, and the second apertures defining the periphery of a second column extending from said second target to said anode along a second axis parallel to said chamber axis; power means connected to said cathode and anode for applying a potential difference therebetween whereby said gas ionizes to form a first plasma in said first column extending from said first target to said anode and a second plasma in said second column extending from said second target to said anode, said first and second plasmas including ions which respectively sputter said first and second targets to cause neutral particles of said targets to be separated therefrom, at least some of the particles of the first and second targets travel through said first and second columns respectively toward said anode; potential means coupled to said elements for controlling the plasma to be substantially confined to its respective column and for controlling the plasma ionization current; and control means for rotating said anode to a first position to sequentially align said substrate with said first column and thereafter with said second column, the apertures of said elements being positioned whereby when said substrate aligned alogned in said first column only particles from said first target reach said substrate and are deposited thereon to form a first target material layer and when said substrate is aligned in said second column with said target only particles from said second target reach said substrate and are deposited thereon as a second target material layer and as said substrate is moved from alignment with said first column to alignment with second column particles from at least one of the targets continuously reaches said substrate to be deposited thereon.

Claim 12

A sputtering apparatus for use in depositing on a substrate a plurality of layers of different materials, with the interface between adjacent layers consisting of only materials of the two adjacent layers comprising: a chamber for containing an inert gas at a selected low pressure; a single stationary cathode in said chamber, said cathode having means for supporting at least first and second target materials each having an exposed surface and defining a center; a rotatable anode in said chamber spaced apart from said cathode along a chamber axis for supporting a substrate thereon; a plurality of elements spaced apart from one another and disposed between said anode and cathode, each element defining first and second apertures, the first apertures of said elements defining a periphery of a first column extending from said first target to said anode along a first axis parallel to said chamber axis, and the second apertures defining the periphery of a second column extending from said second target to said anode along a second axis parallel to said chamber axis; power means connected to said cathode and anode for applying a potential difference therebetween whereby said gas ionizes to form a first plasma in said first column extending from said first target to said anode and a second plasma in said second column extending from said second target to said anode, said first and second plasmas including ions which respectively sputter said first and second targets to cause neutral particles of said targets to be separated therefrom, at least some of the particles of the first and second targets travel through said first and second columns respectively toward said anode; potential means coupled to said elements for controlling the plasma to be substantially confined to its respective column and for controlling the plasma ionization current; and control means for rotating said anode to a first position to sequentially align said substrate with said first column and thereafter with said second column, the apertures of said elements being positioned whereby when said substrate aligned alogned in said first column only particles from said first target reach said substrate and are deposited thereon to form a first target material layer and when said substrate is aligned in said second column with said target only particles from said second target reach said substrate and are deposited thereon as a second target material layer and as said substrate is moved from alignment with said first column to alignment with second column particles from at least one of the targets continuously reaches said substrate to be deposited thereon.

Claim 13

The apparatus as described in claim 10 further including a rotatable shutter adapted to shield said substrate from particles from any of said targets, said shutter being rotatable with said anode to expose said substrate to either of said targets.

Claim 14

The apparatus as described in claim 11 further including a separate biasing ring associated with each column to control the ionization current of each plasma independently of the ionization current in the other column, thereby independently controlling the sputtering rate of each of said targets.

Claim 15

The apparatus as described in claim 12 wherein said potential means are capable of controlling the potential of a first group of said elements positioned adjacent to said cathode to be at said anode potential to thereby prevent plasma spreading out of its respective column.

Claim 16

The apparatus as described in claim 13 wherein said potential means are capable of variably controlling the potentials of a second group of Said elements, positioned between said first group and said anode with the element of said second group closest to said anode being at the anode potential.

Claim 17

The apparatus as described in claim 11 wherein said potential means are capable of controlling the potential of a first group of said elements positioned adjacent to said cathode to be at said anode potential to thereby prevent plasma spreading out of its respective column.