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US3864174A Expired / Lapsed US ⏱️ 0.0 years remaining

Method for manufacturing semiconductor device

Assignee: Individual
•
Filing: 1973-01-22
•
Granted: 1975-02-04
•
Expires: 1993-01-22
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Abstract

Abstract A method for manufacturing semiconductor devices characterized in that a semiconductor element is fabricated, lifetime killers are introduced into the element by diffusion or like, and the element is thereafter subjected to an irradiation of electrons of an energy ranging from 0.1 to 5.0 Mev.

Inventors

  • 👤 Nobuyuki Akiyama
  • 👤 Shunji Miura
  • 👤 Haruo Chisaka

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-28 12:35
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/83; H10D62/834; H10P; H10P34/00; H10P34/40; Y; Y10; Y10S; Y10S148/00; Y10S148/023; Y10S148/062

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 45 words
A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE CHARACTERIZED IN THAT A SEMICONDUCTOR ELEMENT IS FABRICATED, LIFETIME KILLERS ARE INTRODUCED INTO THE ELEMENT BY DIFFUSION OR LIKE, AND THE ELEMENT IS THEREAFTER SUBJECTED TO AN IRRADIATION OF ELECTRONS OF AN ENERGY FRNGING FROM 0.1 TO 5.0 MEV.
Claim 2
Independent Claim 45 words
A METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE CHARACTERIZED IN THAT A SEMICONDUCTOR ELEMENT IS FABRICATED, LIFETIME KILLERS ARE INTRODUCED INTO THE ELEMENT BY DIFFUSION OR LIKE, AND THE ELEMENT IS THEREAFTER SUBJECTED TO AN IRRADIATION OF ELECTRONS OF AN ENERGY FRNGING FROM 0.1 TO 5.0 MEV.
Claim 3
Dependent Claim 30 words
A method as stated in claim 1, characterized in that the semiconductor element is subjected to an irradiation of electrons from outside of a capsule thereby the lifetime is controlled.
Claim 4
Dependent Claim 44 words
A method as stated in claim 1, characterized in that a masking pattern is placed on a semiconductor element and that the masking surface of said element is subjected to an irradiation of electrons thereby the positional control of the lifetime is carried out.

References Cited (Backward Citations)

US3272661A Cited
US3290189A Cited
US3458368A Cited
US3533857A Cited
US3600797A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-02-03 1978-08-05 1979-02-04 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-02-03 1982-08-05 1983-02-04 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-02-03 1986-08-05 1987-02-04 $7700.00 Window Closed / Lapsed

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