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US3860783A Expired / Lapsed US ⏱️ 0.0 years remaining

Ion etching through a pattern mask

Assignee: AT&T Inc
•
Filing: 1970-10-19
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Granted: 1975-01-14
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Expires: 1990-10-19
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Abstract

Abstract A pattern of depressions or holes, defined by a pattern mask, is cut into a surface by means of a beam of ions with energies in the 1,000 to 75,000 electron volt range. Patterns including elements 1 micron wide have been reliably produced in thin films on metallic insulating and semiconducting substrates using photolithographic masking techniques.

Inventors

  • 👤 Paul Herman Schmidt
  • 👤 Edward Guerrant Spencer

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-23 12:59
CPC Classifications
H; H10; H10P; H10P50/00; H10P50/73; H10P50/20; C; C23; C23F; C23F4/00; H01; H01F; H01F10/00; H10P50/24; H10P50/242; H10P50/28; H10P50/282; H10P50/283; H10P95/00

Claims Analysis

Total Claims: 14
Claim 1
Independent Claim 106 words
Method for the production of a pattern of voids in a surface of a rigid body comprising: a. applying to the surface a pattern mask thereby producing a covered portion of the surface and an exposed portion of the surface, and b. removing material from the exposed portion of the surface by means of a removal agent CHARACTERIZED IN THAT the removal agent consists of a beam of ions which ions are parallel to within + OR - 5* and possess energies greater than 1,000 electron volts, which beam is incident so as to strike both the pattern mask and the exposed portion of the surface.
Claim 2
Dependent Claim 106 words
Method for the production of a pattern of voids in a surface of a rigid body comprising: a. applying to the surface a pattern mask thereby producing a covered portion of the surface and an exposed portion of the surface, and b. removing material from the exposed portion of the surface by means of a removal agent CHARACTERIZED IN THAT the removal agent consists of a beam of ions which ions are parallel to within + OR - 5* and possess energies greater than 1,000 electron volts, which beam is incident so as to strike both the pattern mask and the exposed portion of the surface.
Claim 3
Dependent Claim 36 words
A method of claim 1 in which the rigid body comprises a substrate and a surface layer and in which the removed material comprises all of the surface layer beneath the exposed portion of the surface.
Claim 4
Dependent Claim 19 words
A method of claim 2 in which the surface layer is a metal and the substrate is an insulator.
Claim 5
Dependent Claim 21 words
A method of claim 3 in which the metal is a ferromagnetic metal and the insulator is a nonmetallic magnetic material.
Claim 6
Dependent Claim 14 words
A method of claim 2 in which the surface layer is a semiconducting material.
Claim 7
Dependent Claim 20 words
A method of claim 1 in which the pattern mask is produced directly on the surface by a photolithographic process.
Claim 8
Dependent Claim 21 words
A method of claim 6 in which the photolithographic process includes heating the developed pattern mask in order to harden it.
Claim 9
Dependent Claim 16 words
A method of claim 1 in which the pattern mask is a separate and removable mask.
Claim 10
Dependent Claim 39 words
A method of claim 1 in which the beam is incident on the surface at at least one preselected angle which at least one preselected angle lies between 10* and 45* as measured from the surface to the beam.
Claim 11
Dependent Claim 30 words
A method of claim 1 in which the beam is incident on the surface at an angle of essentially 90* as measured from the surface to the beam of ions.
Claim 12
Dependent Claim 30 words
A method of claim 1 further comprising rotating the solid body about an axis which is perpendicular to the surface at the position of incidence of the beam of ions.
Claim 13
Dependent Claim 23 words
A method of claim 1 in which the ions are species selected from the group consisting of argon, helium, neon, krypton, and xenon.
Claim 14
Dependent Claim 19 words
A method of claim 1 in which the ions possess energies between 1,000 electron volts and 75,000 electron volts.

References Cited (Backward Citations)

US3330696A Cited
US3140379A Cited
US3118050A Cited
US3056881A Cited
US3178804A Cited
US3398237A Cited
US3453723A Cited
US3445926A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1978-01-13 1978-07-15 1979-01-14 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1982-01-13 1982-07-15 1983-01-14 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1986-01-13 1986-07-15 1987-01-14 $7700.00 Window Closed / Lapsed

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