Patent US3854443A successfully refreshed from Google Patents.
US3854443A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Gas reactor for depositing thin films
Assignee: Intel Corp
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Filing: 1973-12-19
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Granted: 1974-12-17
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Expires: 1993-12-19
Abstract
Abstract A gas reactor for depositing thin films such as silicon dioxide, the lid of the reactor includes a plurality of concentric rings and a plurality of ports disposed between adjacent rings, a generally radial flow above the specimens is maintained in the reactor.
Inventors
- 👤 W Baerg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:36
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45563; C23C16/45565; C23C16/45502; C23C16/45508; C23C16/45572
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
178 words
In a reactor for vapor depositing, comprising: a bell member and a horizontally disposed platform defining a reaction chamber; a horizontally disposed rotatable susceptor supported on said platform and adapted to support at least one substrate thereon; means to controllably heat said susceptor; means to rotate said susceptor; means to relatively translate said bell member and platform whereby said chamber is selectively opened or sealed; a plurality of concentric, horizontally spaced annular wall elements disposed within said bell member and depending from the roof thereof whereby defining a central chamber zone and a plurality of annular chamber zones thereabout; said zones coextensively overlying said susceptor; a diffuser screen extending across the open ends of each said chamber zone; a plurality of reactor exhaust means disposed at the periphery of said platform; a plurality of inlet ports in each of said zones for feeding the gas of said deposition vapor and whereby said gas is uniformly dispensed through said diffuser screen, radially swept across the at least one substrate to effect said deposition and passed through said exhaust means.
Claim 2
Dependent Claim
178 words
In a reactor for vapor depositing, comprising: a bell member and a horizontally disposed platform defining a reaction chamber; a horizontally disposed rotatable susceptor supported on said platform and adapted to support at least one substrate thereon; means to controllably heat said susceptor; means to rotate said susceptor; means to relatively translate said bell member and platform whereby said chamber is selectively opened or sealed; a plurality of concentric, horizontally spaced annular wall elements disposed within said bell member and depending from the roof thereof whereby defining a central chamber zone and a plurality of annular chamber zones thereabout; said zones coextensively overlying said susceptor; a diffuser screen extending across the open ends of each said chamber zone; a plurality of reactor exhaust means disposed at the periphery of said platform; a plurality of inlet ports in each of said zones for feeding the gas of said deposition vapor and whereby said gas is uniformly dispensed through said diffuser screen, radially swept across the at least one substrate to effect said deposition and passed through said exhaust means.
Claim 3
Dependent Claim
82 words
The reactor defined in claim 1 wherein means feeding said gas to each of said inlet ports, comprises an inlet line for a first gas having a first valve disposed in said line, an inlet line for a second gas coupled to said first line such that such first gas and second gas are combined at the outlet of said first valve and an outlet line with a second valve, said outlet line directing the combined gases to said plurality of ports.
Claim 4
Dependent Claim
54 words
The reactor defined in claim 1 wherein means feeding said gas to each of said inlet ports, comprises a first inlet line including a valve, a second inlet line including a valve and an outlet line in which such first gas and second gas are combined, said outlet line being coupled to said ports.
Claim 5
Dependent Claim
18 words
The reactor defined by claim 1 wherein each plurality of ports is evenly distributed circumferentially in said lid.
Claim 6
Dependent Claim
40 words
The reactor defined by claim 1 wherein each port includes a T-connector with the center of said T-connector being coupled to an inlet source of gas and with the ends of said T-connector being disposed generally circumferentially in said lid.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-16 | 1978-06-17 | 1978-12-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-16 | 1982-06-17 | 1982-12-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-16 | 1986-06-17 | 1986-12-17 | $7700.00 | Window Closed / Lapsed |