Patent US3853634A successfully refreshed from Google Patents.
US3853634A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Self-aligned implanted barrier two-phase charge coupled devices
Assignee: Fairchild Semiconductor Corp
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Filing: 1973-05-21
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Granted: 1974-12-10
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Expires: 1993-05-21
Abstract
Abstract The asymmetrical implanted regions required in a single-level electrode two-phase charge coupled device structure are formed by a process which accurately aligns one edge of each ion-implanted region with an edge of a corresponding conductive electrode overlying the ion-implanted region.
Inventors
- 👤 G Amelio
- 👤 C Kim
- 👤 P Salsbury
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 22:37
CPC Classifications
H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/03
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
101 words
THE METHOD OF FORMING ION-IMPLANTED REGIONS IN SEMICONDUCTOR MATERIAL OVERLAID BY INSULATION AND A LAYER OF POLYCRYSTALLINE SILICON, WHICH COMPRISES THE STEPS OF: FORMING STRIPS OF ION-ABSORBING AND IMPURITY-MASKING MATERIAL ON THE SURFACE OF SAID POLYCRYSTALLINE SILICON; FORMING PHOTORESIST OVER THE SURFACE OF SAID POLYCRYSTALLINE SILICON AND SAID STRIPS OF ION-ABSORBING AND IMPURITYMASKING MATERIAL; REMOVING SELECTED PORTIONS OF SAID PHOTORESIST TO EXPOSE PORTIONS OF SAID POLYCRYSTALLINE SILICON AND PORTIONS OF SAID STRIPS OF ION-ABSORBING AND IMPURITY-MASING MATERIAL; AND IMPLATING IONS IN THE SEMICONDUCTOR MATERIAL UNDERLYING THE EXPOSED POLYCRYSTALLINE SILICON THEREBY TO FORM IN AID SEMICONDUCTOR MATERIAL A PLURALITY OF ION-IMPLANTED REGIONS.
Claim 2
Independent Claim
101 words
THE METHOD OF FORMING ION-IMPLANTED REGIONS IN SEMICONDUCTOR MATERIAL OVERLAID BY INSULATION AND A LAYER OF POLYCRYSTALLINE SILICON, WHICH COMPRISES THE STEPS OF: FORMING STRIPS OF ION-ABSORBING AND IMPURITY-MASKING MATERIAL ON THE SURFACE OF SAID POLYCRYSTALLINE SILICON; FORMING PHOTORESIST OVER THE SURFACE OF SAID POLYCRYSTALLINE SILICON AND SAID STRIPS OF ION-ABSORBING AND IMPURITYMASKING MATERIAL; REMOVING SELECTED PORTIONS OF SAID PHOTORESIST TO EXPOSE PORTIONS OF SAID POLYCRYSTALLINE SILICON AND PORTIONS OF SAID STRIPS OF ION-ABSORBING AND IMPURITY-MASING MATERIAL; AND IMPLATING IONS IN THE SEMICONDUCTOR MATERIAL UNDERLYING THE EXPOSED POLYCRYSTALLINE SILICON THEREBY TO FORM IN AID SEMICONDUCTOR MATERIAL A PLURALITY OF ION-IMPLANTED REGIONS.
Claim 3
Dependent Claim
62 words
The method of claim 1 including the additional step of: removing said photoresist; and placing selected impurities in said polycrystalline silicon to form a plurality of conductive electrodes from said polycrystalline silicon, each electrode being separated from adjacent electrodes by undoped portions of said polycrystalline silicon protected from said impurities by selected ones of said overlying strips of ion-absorbing and impurity-masking material.
Claim 4
Dependent Claim
47 words
The method of claim 2 wherein said step of placing selected impurities in said polycrystalline silicon to form a plurality of conductive electrodes results in an edge of each of said electrodes being approximately aligned with one edge of a corresponding ion-implanted region in said semiconductor material.
Claim 5
Dependent Claim
24 words
The method of claim 2 wherein said step of placing selected impurities in said polycrystalline silicon comprises diffusing said impurities into said polycrystalline silicon.
Claim 6
Dependent Claim
11 words
The method of claim 4 wherein said semiconductor material is silicon.
Claim 7
Dependent Claim
11 words
The method of claim 1 wherein said semiconductor material is silicon.
Claim 8
Independent Claim
226 words
The method of forming ion-implanted regions in a semiconductor substrate overlaid by insulation and a layer of polycrystalline silicon, which comprises the steps of: forming a layer of ion-absorbing and impurity-masking material over the top surface of said polycrystalline silicon; forming a layer of photoresist on the top surface of said layer of ion-absorbing and impurity-masking material; forming a plurality of windows in said photoresist and said ion-absorbing and impurity-masking material thereby to expose a plurality of first regions of said polycrystalline silicon; implanting ions in said underlying semiconductor substrate through the exposed first regions of said polycrystalline silicon and the underlying insulation thereby to form a plurality of ion-implanted regions in said underlying semiconductor material; removing a plurality of portions of the ion-absorbing and impurity-masking material on the top surface of said polycrystalline silicon thereby to expose a plurality of second regions of said polycrystalline silicon, each second region being contiguous with a corresponding first region on a one-for-one basis; and placing impurities in the plurality of first and plurality of second regions of said polycrystalline silicon thereby to form a plurality of conductive electrodes from said polycrystalline silicon, each of said electrodes comprising the contiguous material in a first and second region and being separated from adjacent electrodes by at least one undoped region of polycrystalline silicon underlying the remaining ion-absorbing and impurity-masking material.
Claim 9
Independent Claim
226 words
The method of forming ion-implanted regions in a semiconductor substrate overlaid by insulation and a layer of polycrystalline silicon, which comprises the steps of: forming a layer of ion-absorbing and impurity-masking material over the top surface of said polycrystalline silicon; forming a layer of photoresist on the top surface of said layer of ion-absorbing and impurity-masking material; forming a plurality of windows in said photoresist and said ion-absorbing and impurity-masking material thereby to expose a plurality of first regions of said polycrystalline silicon; implanting ions in said underlying semiconductor substrate through the exposed first regions of said polycrystalline silicon and the underlying insulation thereby to form a plurality of ion-implanted regions in said underlying semiconductor material; removing a plurality of portions of the ion-absorbing and impurity-masking material on the top surface of said polycrystalline silicon thereby to expose a plurality of second regions of said polycrystalline silicon, each second region being contiguous with a corresponding first region on a one-for-one basis; and placing impurities in the plurality of first and plurality of second regions of said polycrystalline silicon thereby to form a plurality of conductive electrodes from said polycrystalline silicon, each of said electrodes comprising the contiguous material in a first and second region and being separated from adjacent electrodes by at least one undoped region of polycrystalline silicon underlying the remaining ion-absorbing and impurity-masking material.
Claim 10
Dependent Claim
11 words
The method of claim 7 wherein said semiconductor material is silicon.
Claim 11
Dependent Claim
48 words
The method of claim 7 wherein said step of placing impurities in the first and second regions of said polycrystalline silicon thereby to form a plurality of conductive electrodes results in an edge of each conductive electrode being approximately aligned with the edge of a corresponding ion-implanted region.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-09 | 1978-06-10 | 1978-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-09 | 1982-06-10 | 1982-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-09 | 1986-06-10 | 1986-12-10 | $7700.00 | Window Closed / Lapsed |