Patent US3853596A successfully refreshed from Google Patents.
US3853596A
Expired / Lapsed
US
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Method of growing a single-crystal on a single-crystal seed
Assignee: Individual
•
Filing: 1972-07-07
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Granted: 1974-12-10
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Expires: 1992-07-07
Abstract
Abstract A method of growing a single-crystal on a single-crystal seed comprises deposition prior to the beginning of crystallization onto the surface of the single-crystal seed to be overgrown, of a continuous layer of a material having at least one of the characteristics of chemical composition and/or structure which differs from that of the material of the single-crystal seed, said product acquiring polarization properties under the influence of the single-crystal seed which are retained during crystallization. The thickness of the layer is selected in such a manner as to eliminate the defects of the surface of the singlecrystal seed and to retain polarization properties acquired from the single-crystal seed. Then the single-crystal seed with said layer deposited thereon is placed into a crystallization medium under conditions required for growing a single-crystal on said layer of the single-crystal seed.
Inventors
- 👤 A Lobachev
- 👤 V Vlasov
- 👤 O Melnikov
- 👤 N Triodina
- 👤 G Distler
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 19:11
CPC Classifications
C; C30; C30B; C30B7/00; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
160 words
A METHOD OF GROWING A SINGLE-CRYSTAL ON A SINGLE-CRYSTAL SEED COMPRISING THE STEPS OF: DEPOSITING PRIOR TO THE BEGINNING OF CRYSTALLIZATION ONTO THE SURFACE TO BE OVERGROWN, WHICH CONSTITUTES AT LEAST ONE PORTION OF SAID SINGLE-CRYSTAL SEED, A LAYER OF A MATERIAL, SAID MATERIAL HAVING AT LEAST ONE OF THE CHARACTERISTICS OF CHEMICAL COMPOSITION OR STRUCTURE WHICH DIFFERS FROM THAT OF THE MATERIAL OF SAID SINGLE-CRYSTAL SEED, SAID LAYER ON THE ONE HAND BEING CAPABLE OF ACQUIRING POLARIZATION PROPERTIES UNDER THE INFLUENCE OF THE MATERIAL OF THE SINGLECRYSTAL SEED WHICH ARE RETAINED DURING CRYSTALLIZATION, AND ON THE OTHER HAND BEING OF A THICKNESS SUCH AS TO ELIMINATE THE DEFECTS OF THE SURFACE OF SAID SINGLE-CRYSTAL SEED AND TO RETAIN POLARIZATION PROPERTIES ACQUIRED FROM SAID SINGLE-CRYSTAL SEED; PLACING SAID SINGLE-CRYSTAL SEED WITH SAID LAYER DEPOSITED THEREON INTO A CRYSTALLIZATION MEDIUM UNDER CONDITIONS REQUIRED FOR GROWING SAID SINGLE-CRYSTAL, AND GROWING AN SINGLECRYSTAL ON THE LAYER OF THE MATERIAL COVERING SAID SINGLE-CRYSTAL SEED.
Claim 2
Independent Claim
160 words
A METHOD OF GROWING A SINGLE-CRYSTAL ON A SINGLE-CRYSTAL SEED COMPRISING THE STEPS OF: DEPOSITING PRIOR TO THE BEGINNING OF CRYSTALLIZATION ONTO THE SURFACE TO BE OVERGROWN, WHICH CONSTITUTES AT LEAST ONE PORTION OF SAID SINGLE-CRYSTAL SEED, A LAYER OF A MATERIAL, SAID MATERIAL HAVING AT LEAST ONE OF THE CHARACTERISTICS OF CHEMICAL COMPOSITION OR STRUCTURE WHICH DIFFERS FROM THAT OF THE MATERIAL OF SAID SINGLE-CRYSTAL SEED, SAID LAYER ON THE ONE HAND BEING CAPABLE OF ACQUIRING POLARIZATION PROPERTIES UNDER THE INFLUENCE OF THE MATERIAL OF THE SINGLECRYSTAL SEED WHICH ARE RETAINED DURING CRYSTALLIZATION, AND ON THE OTHER HAND BEING OF A THICKNESS SUCH AS TO ELIMINATE THE DEFECTS OF THE SURFACE OF SAID SINGLE-CRYSTAL SEED AND TO RETAIN POLARIZATION PROPERTIES ACQUIRED FROM SAID SINGLE-CRYSTAL SEED; PLACING SAID SINGLE-CRYSTAL SEED WITH SAID LAYER DEPOSITED THEREON INTO A CRYSTALLIZATION MEDIUM UNDER CONDITIONS REQUIRED FOR GROWING SAID SINGLE-CRYSTAL, AND GROWING AN SINGLECRYSTAL ON THE LAYER OF THE MATERIAL COVERING SAID SINGLE-CRYSTAL SEED.
Claim 3
Independent Claim
184 words
A method of growing a single-crystal on a single-crystal seed comprising the steps of: producing a single-crystal seed of a material having at least one of the characteristics of chemical composition or structure which differs from that of a predetermined material of the single-crystal being grown; depositing prior to the beginning of crystallization onto at least one portion of the surface of said single-crystal seed a continuous layer of a material having at least one of the characteristics of chemical composition or structure which differs from that of a material of said single-crystal seed, said layer on the one hand being capable of acquiring polarization properties under the influence of the single-crystal seed which are retained during crystallization, and on the other hand being of a thickness such as to eliminate the defects of the surface of said single-crystal seed and to retain polarization properties acquired from said single-crystal seed; placing said single-crystal seed with said layer deposited thereon into a crystallization medium under conditions required for growing said single-crystal, and growing a single-crystal on the layer of the material covering said single-crystal seed.
Claim 4
Independent Claim
184 words
A method of growing a single-crystal on a single-crystal seed comprising the steps of: producing a single-crystal seed of a material having at least one of the characteristics of chemical composition or structure which differs from that of a predetermined material of the single-crystal being grown; depositing prior to the beginning of crystallization onto at least one portion of the surface of said single-crystal seed a continuous layer of a material having at least one of the characteristics of chemical composition or structure which differs from that of a material of said single-crystal seed, said layer on the one hand being capable of acquiring polarization properties under the influence of the single-crystal seed which are retained during crystallization, and on the other hand being of a thickness such as to eliminate the defects of the surface of said single-crystal seed and to retain polarization properties acquired from said single-crystal seed; placing said single-crystal seed with said layer deposited thereon into a crystallization medium under conditions required for growing said single-crystal, and growing a single-crystal on the layer of the material covering said single-crystal seed.
Claim 5
Dependent Claim
36 words
A method according to claim 1, wherein a layer of one of the materials selected from the group consisting of metal, dielectric and semiconductor is deposited onto the surface of said single-crystal seed to be overgrown.
Claim 6
Dependent Claim
36 words
A method according to claim 2, wherein a layer of one of the materials selected from the group consisting of metal, dielectric and semiconductor is deposited onto the surface of said single-crystal seed to be overgrown.
Claim 7
Dependent Claim
32 words
A method according to claim 1, wherein a layer of said material is deposited onto the surface of said single-crystal seed to be overgrown by the method of thermal evaporation in vacuum.
Claim 8
Dependent Claim
30 words
A method according to claim 1, wherein a layer of said material is deposited onto the surface of said single-crystal seed to be overgrown by the method of chemical deposition.
Claim 9
Dependent Claim
30 words
A method according to claim 1, wherein a layer of said material is deposited onto the surface of said single-crystal seed to be overgrown by the method of electrochemical deposition.
Claim 10
Dependent Claim
30 words
A method according to claim 1, wherein a layer of said material is deposited onto the surface of said single-crystal seed to be overgrown by the method of cathode sputtering.
Claim 11
Dependent Claim
32 words
A method according to claim 2, wherein a layer of said material is deposited onto the surface of said single-crystal seed to be overgrown by the method of thermal evaporation in vacuum.
Claim 12
Dependent Claim
30 words
A method according to claim 2, wherein a layer of said material is deposited onto the surface of said single-crystal seed to be overgrown by the method of chemical deposition.
Claim 13
Dependent Claim
30 words
A method according to claim 2, wherein a layer of said material is deposited onto the surface of said single-crystal seed to be overgrown by the method of electrochemical deposition.
Claim 14
Dependent Claim
30 words
A method According to claim 2, wherein a layer of said material is deposited onto the surface of said single-crystal seed to be overgrown by the method of cathode sputtering.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-09 | 1978-06-10 | 1978-12-10 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-09 | 1982-06-10 | 1982-12-10 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-09 | 1986-06-10 | 1986-12-10 | $7700.00 | Window Closed / Lapsed |