US3851382A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of producing a semiconductor or thick film device
Assignee: Telefunken Electronic GmbH
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Filing: 1972-07-24
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Granted: 1974-12-03
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Expires: 1992-07-24
Abstract
Abstract A method of producing a semiconductor or thick film device comprises forming a layer of etching resistant, temperature resistant and light insensitive plastics material on a carrier body, such as an insulating material or semiconductor body and removing predetermined areas of the plastics layer by means of a controlled electron beam. The areas of the carrier body from which the plastics material has been removed can be used for the removal of further material, depositing further material or the introduction of further material.
Inventors
- 👤 F Stork
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 21:11
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D86/00; H10D86/01; H10P; H10P95/00; H10W; H10W20/00; H10W20/40; H10W74/00; H10W74/40; H10W74/47; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/05; Y10S148/106; Y10S438/00; Y10S438/942; Y10S438/945; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49124; Y10T29/4913
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
140 words
A METHOD OF PRODUCING A SEMICONDUCTOR OR THICK FILM DEVICE, COMPRISING THE STEPS OF PROVIDING A THIN METAL LAYER ON ONE SURFACE OF AN AT LEAST PARTIALLY INSULATING BODY, FORMING A LAYER OF PLASTICS MATERIAL WHICH IS RESISTANT TO ETCHING, TEMPERATURE RESISTANT, AND INSENSITIVE TO LIGHT ON SAID THIN METAL LAYER, GUIDING AN ELECTRON BEAM OVER SAID PLASTICS LAYER, CONTROLLING SAID BEAM SO AS TO REMOVE PREDETERMINED AREAS OF SAID PLASTICS LAYER FOR FORMING APERTURES IN SAID PLASTICS LAYER, DEPOSITING FURTHER METAL, EITHER BY ELECTRO-DEPOSITION OR WITHOUT CURRENT, ON THE AREAS OF SAID THIN METAL LAYER THUS EXPOSED UNTIL SAID APERTURES HAVE BEEN AT LEAST PARTIALLY FILLED WITH SAID FURTHER METAL, REMOVING SAID PLASTICS LAYER WITH A SOLVENT, AND REMOVING THE AREAS OF SAID THIN METAL LAYER WHICH HAVE NOT HAD SAID FURTHER METAL DEPOSITED THEREON IN AN EXCITING SOLUTION.
Claim 2
Independent Claim
140 words
A METHOD OF PRODUCING A SEMICONDUCTOR OR THICK FILM DEVICE, COMPRISING THE STEPS OF PROVIDING A THIN METAL LAYER ON ONE SURFACE OF AN AT LEAST PARTIALLY INSULATING BODY, FORMING A LAYER OF PLASTICS MATERIAL WHICH IS RESISTANT TO ETCHING, TEMPERATURE RESISTANT, AND INSENSITIVE TO LIGHT ON SAID THIN METAL LAYER, GUIDING AN ELECTRON BEAM OVER SAID PLASTICS LAYER, CONTROLLING SAID BEAM SO AS TO REMOVE PREDETERMINED AREAS OF SAID PLASTICS LAYER FOR FORMING APERTURES IN SAID PLASTICS LAYER, DEPOSITING FURTHER METAL, EITHER BY ELECTRO-DEPOSITION OR WITHOUT CURRENT, ON THE AREAS OF SAID THIN METAL LAYER THUS EXPOSED UNTIL SAID APERTURES HAVE BEEN AT LEAST PARTIALLY FILLED WITH SAID FURTHER METAL, REMOVING SAID PLASTICS LAYER WITH A SOLVENT, AND REMOVING THE AREAS OF SAID THIN METAL LAYER WHICH HAVE NOT HAD SAID FURTHER METAL DEPOSITED THEREON IN AN EXCITING SOLUTION.
Claim 3
Dependent Claim
26 words
A method as defined in claim 1 wherein said plastics layer has a thickness of about 1 Mu m to a few tenths of a millimeter.
Claim 4
Dependent Claim
16 words
A method as defined in claim 2 wherein said plastics layer is a layer of tetrafluoroethylene.
Claim 5
Dependent Claim
16 words
A method as defined in claim 2 wherein said plastics layer is a layer of polyurethane.
Claim 6
Dependent Claim
22 words
A method as defined in claim 1 wherein the step of forming comprises spraying the plastics layer onto said thin metal layer.
Claim 7
Dependent Claim
17 words
A method as defined in claim 1 wherein the step of depositing comprises electro-depositing said further metal.
Claim 8
Dependent Claim
19 words
A method as defined in claim 1 wherein the step of depositing comprises depositing said further metal without current.
Claim 9
Dependent Claim
40 words
A method as defined in claim 1 wherein said thin metal layer has a thickness of about 500 to 1,000 A and the step of controlling includes providing channels about 5 to 10 Mu m wide to receive conducting paths.
Claim 10
Dependent Claim
36 words
A method as defined in claim 1 wherein the steps of guiding and controlling include controlling the cross-section, the intensity, the periodic rhythm, and the movement of the electron beam by means of a programmed computer.
Claim 11
Independent Claim
121 words
A method of producing a semiconductor device comprising the steps of: covering a surface of a semiconductor body of a specific type of conductivity with an insulating layer, applying a layer of plastics material which is resistant to etching, temperature resistant and insensitive to light on said insulating layer, guiding an electron beam over said plastics layer, controlling said beam so as to remove predetermined areas of said plastics layer for forming apertures in said plastics layer, removing the exposed portion of said insulating layer by means of an etching technique, forming recesses for the reception of partial epitaxial semiconductor regions in said semiconductor body, removing said plastics layer, and, at least partially filling said recesses with epitaxially deposited semiconductor material.
Claim 12
Independent Claim
121 words
A method of producing a semiconductor device comprising the steps of: covering a surface of a semiconductor body of a specific type of conductivity with an insulating layer, applying a layer of plastics material which is resistant to etching, temperature resistant and insensitive to light on said insulating layer, guiding an electron beam over said plastics layer, controlling said beam so as to remove predetermined areas of said plastics layer for forming apertures in said plastics layer, removing the exposed portion of said insulating layer by means of an etching technique, forming recesses for the reception of partial epitaxial semiconductor regions in said semiconductor body, removing said plastics layer, and, at least partially filling said recesses with epitaxially deposited semiconductor material.
Claim 13
Dependent Claim
15 words
A method as defined in claim 10 wherein said insulating layer is an oxide layer.
Claim 14
Dependent Claim
15 words
A method as defined in claim 10 wherein said insulating layer is a nitride layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-12-02 | 1978-06-03 | 1978-12-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-12-02 | 1982-06-03 | 1982-12-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-12-02 | 1986-06-03 | 1986-12-03 | $7700.00 | Window Closed / Lapsed |