US3401449A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of fabricating a metal base transistor
Assignee: Texas Instruments Inc
•
Filing: 1965-10-24
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Granted: 1968-09-17
•
Expires: 1985-10-24
Abstract
No abstract record available.
Inventors
- 👤 Don W Shaw
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 22:06
CPC Classifications
C; C30; C30B; C30B25/00; C30B25/02; C30B25/04; H; H10; H10D; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3214; H10P14/3221; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; Y; Y10; Y10S; Y10S148/00; Y10S148/029; Y10S148/05; Y10S148/084; Y10S148/115; Y10S148/142
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
132 words
IN A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE THE STEPS OF: (A) FORMING A FIRST LAYER OF SEMICONDUCTOR MATERIAL ADJACENT A SECOND LAYER OF SEMICONDUCTOR MATERIAL, SAID FIRST LAYER BEING OF SUBSTNATIALLY HIGHER ELECTRICAL RESISTIVITY THAN SAID SECOND LAYER, (B) SELECTIVELY REMOVING A PORTION OF SAID FIRST LAYER TO FORM A POCKET AND EXPOSE A SURFACE OF SAID SECOND LAYER AT THE BOTTOM OF SAID POCKET, THE REMAINING PORTIONS OF SAID POCKET BEING OF SAID HIGHER ELECTRICAL RESISTIVITY, (C) ELECTROPLATING A METAL LAYER WITHIN SAID POCKET UPON THE SAID EXPOSED SURFACE OF SAID SECOND LAYER, AND (D) EPITAXIALLY GROWING A THIRD REGION OF SEMICONDUCTOR MATERIAL OVER SAID METAL LAYER WITHIN SAID POCKET, SAID EPITAXIAL GROWTH PROCEEDING FROM THE SAID REMAINING PORTIONS OF SAID POCKET AND EXTENDING SUBSTANTIALLY LATERALLY OVER SAID METAL LAYER.
Claim 2
Dependent Claim
132 words
IN A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE THE STEPS OF: (A) FORMING A FIRST LAYER OF SEMICONDUCTOR MATERIAL ADJACENT A SECOND LAYER OF SEMICONDUCTOR MATERIAL, SAID FIRST LAYER BEING OF SUBSTNATIALLY HIGHER ELECTRICAL RESISTIVITY THAN SAID SECOND LAYER, (B) SELECTIVELY REMOVING A PORTION OF SAID FIRST LAYER TO FORM A POCKET AND EXPOSE A SURFACE OF SAID SECOND LAYER AT THE BOTTOM OF SAID POCKET, THE REMAINING PORTIONS OF SAID POCKET BEING OF SAID HIGHER ELECTRICAL RESISTIVITY, (C) ELECTROPLATING A METAL LAYER WITHIN SAID POCKET UPON THE SAID EXPOSED SURFACE OF SAID SECOND LAYER, AND (D) EPITAXIALLY GROWING A THIRD REGION OF SEMICONDUCTOR MATERIAL OVER SAID METAL LAYER WITHIN SAID POCKET, SAID EPITAXIAL GROWTH PROCEEDING FROM THE SAID REMAINING PORTIONS OF SAID POCKET AND EXTENDING SUBSTANTIALLY LATERALLY OVER SAID METAL LAYER.
References Cited (Backward Citations)
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US3185935A
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US3121809A
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US3280391A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-09-17 | 1972-03-18 | 1972-09-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-09-17 | 1976-03-18 | 1976-09-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-09-17 | 1980-03-18 | 1980-09-17 | $7700.00 | Window Closed / Lapsed |