Method of manufacturing semiconductive device

Claim 1

A METHOD FOR PRODUCING REPRODUCIBLY AND IN QUANTITY HIGH-FREQUENCY TRANSISTORS EACH HAVING EMITTER, COLLECTOR AND BASE ELEMENTS, WHICH METHOD COMPRISES: PROVIDING A PLURALITY OF BODIES OF SUBSTANTIALLY IDENTICAL SEMICONDUCTIVE MATERIAAL; SUBJECTING SAID PLURALITY OF BODIES TO THE SAME SURFACE DIFFUSION TREATMENT TO PRODUCT THEREIN SURFACE LAYERS OF SUBSTANTIALLY IDENTICAL GRADEDRESISTIVITY CHARACTERISTICS, EACH OF SAID SURFACE LAYERS HAVING A FIRST REGION BENEATH SAID EXTERNAL SURFACE THE HAVING A FIRST REGION BENEATH SAID EXTERNAL SURFACE THE RESITIVITY OF WHICH IS SUBSTANTIALLY HIGHER THAN THAT EXISTING AT SAID EXTERNAL SURFACE AND WHICH IS SUITABLE FOR THE BASE MATERIAL ADJACENT SAID EMITTER ELEMENT, EACH OF SAID BODIES ALSO CONTAINING A SECOND REGION ON THE OPPOSITE SIDE OF SAID FIRST REGION FROM SAID EXTERIIOR SURFACE WHICH IS OF HIGHER RESISTIVITY THAN SAID FIRST REGION AND SUITABLE FOR THE BASE MATERIAL ADJACENT SAID COLLECTOR ELEMENT; SUBJECTING A TYPICAL BODY OF SAID PLURALITY OF BODIES TO JET-ELECTROLYTIC ETCHING OF A LIMITED PORTION OF SAID SURFACE LAYER THEREOF TO ETCH THEREIN A DEPRESSION EXTENDING INTO SAID LAYER TOWARD SAID FIRST REGION THEREOF; INTERRUPTING SAID ETCHING TO APPLY TO SAID BODY A RECTIFYING CONNECTION AT THE BOTTOM OF SAID DEPRESSION AND A REVERSE BIAS WITH RESPECT TO SAID RECTIFYING CONNECTION, THEREBY TO ASCERTAIN THE RESISTIVITY OF SAID LAYER AT SAID BOTTOM OF SAID DEPRESSION; ALTERNATING SAID ETCHING AND SAID APPLICATION OF SAID RECTIFYING CONNECTION AND SAID REVERSE BIAS UNTIL SAID ETCHING HAS PROCEEDED INTO SAID LAYER OF SAID TYPICAL BODY TO A DEPTH AT WHICH SAID ASCERTAINED RESISTIVITY IS SUBSTANTIALLY EQUAL TO SAID RESISTIVITY OF SAID FIRST REGION, THE DEPTH OF SAID DEPRESSION THEREBY BEING SUBSTANTIALLY EQUAL TO THAT REQUIRED TO EXPOSE SAID FIRST REGION; JET-ELECTROLYTICALLY ETCHING A LIMITED PORTION OF SAID SURFACE LAYER OF EACH OF THE OTHERS OF SAID PLURALITY OF BODIES TO PRODUCE IN EACH OF SAID OTHER BODIES A DEPRESSION OF SUBSTANTIALLY SAID DEPTH; JET-ELECTRLYTICALLY ETCHING EACH OF SAID OTHER BODIES AT A SURFACE ON THE OPPOSITE SIDE OF SAID SECOND REGION FROM SAID DEPRESSION THEREIN TO FORM ANOTHER DEPRESSION EXTENDING TOWARD SAID SECOND REGION THEREIN, SAID LAST-NAMED ETCHING BEING TERMINATED WHEN IT HAS PROCEDED TO A DEPTH SBSTANTIALLY EQUAL TO THAT REQUIRED TO EXPOSE SAID SECOND REGION THEREIN; FORMING TWO RECTIFYING BARRIERS IN EACH OF SAID OTHER BODIES BY A PROCESS INCLUDING JET-ELECTROLYTICALLY DEPOSITING A METAL SUBSTANCE ON THE BOTTOMS OF THE TWO OPPOSED DEPRESSIONS FORMED IN EACH OF SAID BODIES BY SAID JETELECTROLYTIC ETCHING; AND APPLYING A SUBSTANTIALLY OHMIC CONNECTION TO EACH OF SAID OTHER BODIES ON A PORTION OF SAID EXTERIOR SURFACE OF SAID SURFACE LAYER THEREOF LYING OUTSIDE SAID ETCHED DEPRESSIONS THEREIN.

Claim 2

A METHOD FOR PRODUCING REPRODUCIBLY AND IN QUANTITY HIGH-FREQUENCY TRANSISTORS EACH HAVING EMITTER, COLLECTOR AND BASE ELEMENTS, WHICH METHOD COMPRISES: PROVIDING A PLURALITY OF BODIES OF SUBSTANTIALLY IDENTICAL SEMICONDUCTIVE MATERIAAL; SUBJECTING SAID PLURALITY OF BODIES TO THE SAME SURFACE DIFFUSION TREATMENT TO PRODUCT THEREIN SURFACE LAYERS OF SUBSTANTIALLY IDENTICAL GRADEDRESISTIVITY CHARACTERISTICS, EACH OF SAID SURFACE LAYERS HAVING A FIRST REGION BENEATH SAID EXTERNAL SURFACE THE HAVING A FIRST REGION BENEATH SAID EXTERNAL SURFACE THE RESITIVITY OF WHICH IS SUBSTANTIALLY HIGHER THAN THAT EXISTING AT SAID EXTERNAL SURFACE AND WHICH IS SUITABLE FOR THE BASE MATERIAL ADJACENT SAID EMITTER ELEMENT, EACH OF SAID BODIES ALSO CONTAINING A SECOND REGION ON THE OPPOSITE SIDE OF SAID FIRST REGION FROM SAID EXTERIIOR SURFACE WHICH IS OF HIGHER RESISTIVITY THAN SAID FIRST REGION AND SUITABLE FOR THE BASE MATERIAL ADJACENT SAID COLLECTOR ELEMENT; SUBJECTING A TYPICAL BODY OF SAID PLURALITY OF BODIES TO JET-ELECTROLYTIC ETCHING OF A LIMITED PORTION OF SAID SURFACE LAYER THEREOF TO ETCH THEREIN A DEPRESSION EXTENDING INTO SAID LAYER TOWARD SAID FIRST REGION THEREOF; INTERRUPTING SAID ETCHING TO APPLY TO SAID BODY A RECTIFYING CONNECTION AT THE BOTTOM OF SAID DEPRESSION AND A REVERSE BIAS WITH RESPECT TO SAID RECTIFYING CONNECTION, THEREBY TO ASCERTAIN THE RESISTIVITY OF SAID LAYER AT SAID BOTTOM OF SAID DEPRESSION; ALTERNATING SAID ETCHING AND SAID APPLICATION OF SAID RECTIFYING CONNECTION AND SAID REVERSE BIAS UNTIL SAID ETCHING HAS PROCEEDED INTO SAID LAYER OF SAID TYPICAL BODY TO A DEPTH AT WHICH SAID ASCERTAINED RESISTIVITY IS SUBSTANTIALLY EQUAL TO SAID RESISTIVITY OF SAID FIRST REGION, THE DEPTH OF SAID DEPRESSION THEREBY BEING SUBSTANTIALLY EQUAL TO THAT REQUIRED TO EXPOSE SAID FIRST REGION; JET-ELECTROLYTICALLY ETCHING A LIMITED PORTION OF SAID SURFACE LAYER OF EACH OF THE OTHERS OF SAID PLURALITY OF BODIES TO PRODUCE IN EACH OF SAID OTHER BODIES A DEPRESSION OF SUBSTANTIALLY SAID DEPTH; JET-ELECTRLYTICALLY ETCHING EACH OF SAID OTHER BODIES AT A SURFACE ON THE OPPOSITE SIDE OF SAID SECOND REGION FROM SAID DEPRESSION THEREIN TO FORM ANOTHER DEPRESSION EXTENDING TOWARD SAID SECOND REGION THEREIN, SAID LAST-NAMED ETCHING BEING TERMINATED WHEN IT HAS PROCEDED TO A DEPTH SBSTANTIALLY EQUAL TO THAT REQUIRED TO EXPOSE SAID SECOND REGION THEREIN; FORMING TWO RECTIFYING BARRIERS IN EACH OF SAID OTHER BODIES BY A PROCESS INCLUDING JET-ELECTROLYTICALLY DEPOSITING A METAL SUBSTANCE ON THE BOTTOMS OF THE TWO OPPOSED DEPRESSIONS FORMED IN EACH OF SAID BODIES BY SAID JETELECTROLYTIC ETCHING; AND APPLYING A SUBSTANTIALLY OHMIC CONNECTION TO EACH OF SAID OTHER BODIES ON A PORTION OF SAID EXTERIOR SURFACE OF SAID SURFACE LAYER THEREOF LYING OUTSIDE SAID ETCHED DEPRESSIONS THEREIN.