Uniplanar ccd structure and method

Claim 1

The method of claim 1 wherein the steps of forming an opening through each of said at least two regions of said first layer of insulation and of forming a plurality of openings in said second layer of insulation to expose the top surfaces of a plurality of regions of polycrystalline silicon comprises: forming a third layer of insulation over the top surface of the second layer of insulation and the exposed surface of the first layer of insulation, said third layer and said first layer together being capable of masking impurities to be diffused into said semiconductor material; removing portions of said third layer of insulation and said second layer of insulation to expose surfaces of said plurality of regions of said polycrystalline silicon and removing portions of said third layer of insulation and said first layer of insulation to expose the surfaces of at least two selected regions of said semiconductor material, the exposed surfaces of said at least two seleCted regions occupying a smaller surface area than said at least two openings in said second layer of insulation and in said polycrystalline silicon.

Claim 11

A method for making a charge coupled device structure and an MOS transistor in a single piece of semiconductor material which comprises the following steps: forming a channel stop region adjacent one surface of semiconductor material, said channel stop region forming a closed path around the surface of a portion of said semiconductor material in which is to be formed a charge coupled device and an MOS transistor, at least part of the semiconductor material outside of said portion comprising the field of said structure; forming an insulating layer over said one surface of said semiconductor material; forming a uniform layer of polycrystalline semiconductor material over said insulating layer; removing the polycrystalline semiconductor material formed over the field of said structure and over selected regions of said insulating layer to leave on said insulating layer selected shapeS of polycrystalline semiconductor material; forming openings through said selected regions of said insulating layer to expose the surfaces of selected regions of said semiconductor material, said openings being formed adjacent selected portions of said polycrystalline semiconductor material left on said insulating layer and each opening through said insulating layer being smaller in area than the corresponding opening through said polycrystalline semiconductor material; forming a second insulating layer over said polycrystalline semiconductor material leaving exposed the surfaces of a plurality of regions of said polycrystalline semiconductor material; and forming in said regions of semiconductor material the surfaces of which are exposed by said openings, regions of a conductivity type opposite to the conductivity type of said semiconductor material and simultaneously forming in said plurality of regions of polycrystalline semiconductor material a plurality of conductive regions of said opposite conductivity type.