Methods of producing field effect transistors having insulated control electrodes

Claim 1

A method for producing an insulated gate field effect transistor in a semiconductor body comprising the steps of: forming an insulating layer on one surface of the semiconductor body; opening spaced diffusion windows within the insulating layer for the diffusion of source and drain regions into the semiconductor body; diffusing source and drain regions into the semiconductor body; covering said surface of the semiconductor body with an insulating layer; applying a metal layer over the entire surface of the insulating layer including that region of the insulating layer over which the gate electrode is to be formed opening contact-making windows within the metal layer and the insulating layer for the sOurce and drain regions; and producing source and drain electrodes within the contact-making windows and a gate electrode, said step of producing including applying a second metal layer both to said metal layer and within said contact-making windows and selectively removing portions of the two metal layers which are not needed for the electrodes for producing the gate electrode and said source and drain electrodes.

Claim 2

A method for producing an insulated gate field effect transistor in a semiconductor body comprising the steps of: forming an insulating layer on one surface of the semiconductor body; opening spaced diffusion windows within the insulating layer for the diffusion of source and drain regions into the semiconductor body; diffusing source and drain regions into the semiconductor body; covering said surface of the semiconductor body with an insulating layer; applying a metal layer over the entire surface of the insulating layer including that region of the insulating layer over which the gate electrode is to be formed opening contact-making windows within the metal layer and the insulating layer for the sOurce and drain regions; and producing source and drain electrodes within the contact-making windows and a gate electrode, said step of producing including applying a second metal layer both to said metal layer and within said contact-making windows and selectively removing portions of the two metal layers which are not needed for the electrodes for producing the gate electrode and said source and drain electrodes.

Claim 5

A method for producing an insulated gate field effect transistor in a semiconductor body comprising the steps of: forming an insulating layer on one surface of the semiconductor body; opening spaced diffusion windows within the insulating layer for the diffusion of source and drain regions into the the semiconductor body; diffusing source and drain regions into the semiconductor body; covering said surface of the semiconductor body with an insulating layer; subsequent to the step of covering the surface of the semiconductor body with an insulating layer, applying a getter or passivating layer to the insulating layer as an intermediate layer; applying a metal layer over the entire surface of the intermediate layer including that region of the intermediate layer over which the gate electrode is to be formed; opening contact making windows within the metal layer, the intermediate layer and the insulating layer for the source and drain regions; and producing source and drain electrodes within the contact-making windows and a gate electrode, said step of producing including applying a second metal layer both to said metal layer and within said contact-making windows and selectively removing portions of the two metal layers which are not needed for said electrodes for producing the gate electrode and said source and drain electrodes.

Claim 6

A method for producing an insulated gate field effect transistor in a semiconductor body comprising the steps of: forming an insulating layer on one surface of the semiconductor body; opening spaced diffusion windows within the insulating layer for the diffusion of source and drain regions into the the semiconductor body; diffusing source and drain regions into the semiconductor body; covering said surface of the semiconductor body with an insulating layer; subsequent to the step of covering the surface of the semiconductor body with an insulating layer, applying a getter or passivating layer to the insulating layer as an intermediate layer; applying a metal layer over the entire surface of the intermediate layer including that region of the intermediate layer over which the gate electrode is to be formed; opening contact making windows within the metal layer, the intermediate layer and the insulating layer for the source and drain regions; and producing source and drain electrodes within the contact-making windows and a gate electrode, said step of producing including applying a second metal layer both to said metal layer and within said contact-making windows and selectively removing portions of the two metal layers which are not needed for said electrodes for producing the gate electrode and said source and drain electrodes.