Patent US3818370A successfully refreshed from Google Patents.
US3818370A
Expired / Lapsed
US
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Photosensitive solid oscillator
Assignee: Panasonic Electric Works Co Ltd
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Filing: 1973-03-12
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Granted: 1974-06-18
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Expires: 1993-03-12
Abstract
Abstract A photosensitive solid oscillator which performs its oscillation when a light irradiation is provided substantially at the side of main electrodes. The oscillator comprises a wafer consisting of a semiconductor material, a lower impurity region of reverse conduction type to that of said semiconductor wafer and formed on the lower surface of the wafer, a first upper impurity region of reverse conduction type to that of the wafer and formed on part of the upper surface of the wafer, second upper impurity region of the same conduction type as the wafer and formed on the upper surface of said first upper impurity region, first and second ohmic main electrodes provided respectively on the surface of said second upper impurity region and on the exposed surface of the wafer, and a DC voltage source applied between said two main electrodes so that said voltage is in the reverse direction with respect to the junction between said wafer and said first upper region on the wafer.
Inventors
- 👤 T Abe
- 👤 K Kakite
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:27
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/26; H03; H03B; H03B17/00
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
197 words
A photosensitive solid oscillator which performs its oscillation upon a light irradiation substantially at the side of main electrodes, which comprises a wafer consisting of a semiconductor material having a first type of conductivity selected from the group consisting of n-type conductivity and ptype conductivity; a first impurity region in said wafer having a conductivity type which is reverse to that of said wafer, said first impurity region being formed on one of the surfaces of said wafer; a second impurity region in said wafer having a conductivity type which is reverse to that of said wafer, said second impurity region being formed on a part of a second surface of said wafer, a third impurity region having the same conductivity type as said wafer and formed on a part of the surface of said second impurity region; an ohmic first main electrode provided on the surface of said third impurity region; an ohmic second main electrode provided on a surface of said wafer; and a DC voltage source applied between said two main electrodes so that said voltage is in the reverse direction with respect to the junction between said wafer and said second impurity region.
Claim 2
Dependent Claim
197 words
A photosensitive solid oscillator which performs its oscillation upon a light irradiation substantially at the side of main electrodes, which comprises a wafer consisting of a semiconductor material having a first type of conductivity selected from the group consisting of n-type conductivity and ptype conductivity; a first impurity region in said wafer having a conductivity type which is reverse to that of said wafer, said first impurity region being formed on one of the surfaces of said wafer; a second impurity region in said wafer having a conductivity type which is reverse to that of said wafer, said second impurity region being formed on a part of a second surface of said wafer, a third impurity region having the same conductivity type as said wafer and formed on a part of the surface of said second impurity region; an ohmic first main electrode provided on the surface of said third impurity region; an ohmic second main electrode provided on a surface of said wafer; and a DC voltage source applied between said two main electrodes so that said voltage is in the reverse direction with respect to the junction between said wafer and said second impurity region.
Claim 3
Dependent Claim
36 words
An oscillator according to claim 1 which further comprises an ohmic auxiliary electrode provided on said first impurity region and a bias voltage applied between said auxiliary electrode and at least one of said main electrodes.
Claim 4
Dependent Claim
33 words
An oscillator according to claim 1, wherein an ohmic auxiliary electrode is provided on said first impurity region and a capacitor is connected between said auxiliary electrode and one of said main electrodes.
Claim 5
Dependent Claim
38 words
An oscillator according to claim 1, wherein an ohmic auxiliary electrode is provided on said first impurity region and a capacitor and a resistance are connected in series between said auxiliary electrode and one of said main electrodes.
Claim 6
Dependent Claim
38 words
An oscillator according to claim 1, wherein an ohmic auxiliary electrode is provided on said first impurity region and a capacitor and a resistance are connected in parallel between said auxiliary electrode and one of said main electrodes.
Claim 7
Dependent Claim
48 words
An oscillator according to claim 1, wherein an ohmic auxiliary electrode is provided on said first impurity region and a first resistance is connected between said auxiliary electrode and the first main electrode and a second resistance is connected between said auxiliary electrode and the second main electrode.
Claim 8
Dependent Claim
62 words
An oscillator according to claim 1, wherein an ohmic control electrode is provided on said second impurity region, and a biasing DC voltage source is connected between said control electrode and said first main electrode, the voltage from said DC source being applied to the electrodes in the forward direction with respect to the junction between said second and third impurity regions.
Claim 9
Dependent Claim
35 words
An oscillator according to claim 7, wherein an ohmic auxiliary electrode is provided on said first impurity region and a bias voltage is applied between said auxiliary electrode and either one of said main electrodes.
Claim 10
Dependent Claim
33 words
An oscillator according to claim 7, wherein an ohmic auxiliary electrode is provided on said first impurity region and a capacitor is conNected between said auxiliary electrode and one of said main electrodes.
Claim 11
Dependent Claim
38 words
An oscillator according to claim 7 wherein an ohmic auxiliary electrode is provided on said first impurity region and a capacitor and a resistance are connected in series between said auxiliary electrode and one of said main electrodes.
Claim 12
Dependent Claim
38 words
An oscillator according to claim 7, wherein an ohmic auxiliary electrode is provided on said first impurity region and a capacitor and a resistance are connected in parallel between said auxiliary electrode and one of said main electrodes.
Claim 13
Dependent Claim
33 words
An oscillator according to claim 7, wherein an ohmic auxiliary electrode is provided on said first impurity region and a resistance is connected between said auxiliary electrode and one of said main electrodes.
References Cited (Backward Citations)
US3422323A
Cited
US3665340A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-06-17 | 1977-12-17 | 1978-06-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-06-17 | 1981-12-17 | 1982-06-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-06-17 | 1985-12-17 | 1986-06-18 | $7700.00 | Window Closed / Lapsed |