US3665340A
Expired / Lapsed
US
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Photosensitive solid oscillator
Assignee: Panasonic Electric Works Co Ltd
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Filing: 1969-12-30
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Granted: 1972-05-23
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Expires: 1989-12-30
Abstract
Abstract A photosensitive solid oscillator, which comprises an impurity layer formed on a surface of a semi-conductor wafer, two separate impurity layers formed on the other surface of said wafer as spaced along the surface from each other, and electrodes respectively provided at least on each of the latter two impurity layers. The respective impurity layers on both surfaces of the wafer are of a reversely conducting type semiconductor with respect to said wafer and contain an impurity of a higher concentration than in the wafer.
Inventors
- 👤 Kiyoshi Kojima
- 👤 Toshiro Abe
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 10:35
CPC Classifications
H; H03; H03B; H03B17/00; G; G08; G08B; G08B23/00; H02; H02M; H02M1/00; H02M1/08; H02M1/088; H02M1/092; H10; H10D; H10D99/00; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/26
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
187 words
A photosensitive solid oscillator comprising a semiconductor wafer, a first impurity layer formed on one surface of said wafer in a smaller thickness than the wafer, said first impurity layer being of a reversely conducting type semiconductor with respect to said wafer and containing an impurity of a concentration higher than in the wafer, second and third impurity layers formed on the other surface of said wafer in a smaller thickness than the wafer and separated from each other, each of said second and third impurity layers being of a reversely conducting type semiconductor with respect to said wafer and containing an impurity of a concentration higher than in the wafer, and ohmic electrodes provided respectively on said second and third impurity layers, a source voltage applied through a resistor between said electrodes such that an avalanche between the wafer and one of the second and third impurity layers is produced, so that a pulse type oscillation output will be obtained at both ends of said resistor in such manner that the frequency of said output will vary depending on variations in light amount or source voltage.
Claim 2
Dependent Claim
187 words
A photosensitive solid oscillator comprising a semiconductor wafer, a first impurity layer formed on one surface of said wafer in a smaller thickness than the wafer, said first impurity layer being of a reversely conducting type semiconductor with respect to said wafer and containing an impurity of a concentration higher than in the wafer, second and third impurity layers formed on the other surface of said wafer in a smaller thickness than the wafer and separated from each other, each of said second and third impurity layers being of a reversely conducting type semiconductor with respect to said wafer and containing an impurity of a concentration higher than in the wafer, and ohmic electrodes provided respectively on said second and third impurity layers, a source voltage applied through a resistor between said electrodes such that an avalanche between the wafer and one of the second and third impurity layers is produced, so that a pulse type oscillation output will be obtained at both ends of said resistor in such manner that the frequency of said output will vary depending on variations in light amount or source voltage.
Claim 3
Dependent Claim
86 words
A photosensitive solid oscillator according to claim 1 wherein a fourth impurity layer is provided on the same surface of the wafer with and between said second and third impurity layers, said fourth impurity layer being of a reverse conductive type with respect to the wafer and containing an impurity of a higher concentration than in the wafer, and an auxiliary electrode provided on said fourth impurity layer, so that said pulse type oscillation output frequency and oscillation starting voltage of said source voltage is regulated.
Claim 4
Dependent Claim
44 words
A photosensitive solid oscillator according to claim 1 wherein either one of the electrodes provided on said second and third impurity layers is used as a common electrode and a bias electrode for impressing a bias voltage is provided on said first impurity layer.
Claim 5
Dependent Claim
53 words
A photosensitive solid oscillator according to claim 1 wherein any one of the electrodes provided on said second and third impurity layers is made a common electrode and at least one of an inductance, condenser and resistance is connected between said common electrode and the bias electrode provided on said first impurity layer.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-23 | 1975-11-22 | 1976-05-23 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-23 | 1979-11-22 | 1980-05-23 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-23 | 1983-11-22 | 1984-05-23 | $7700.00 | Window Closed / Lapsed |