Patent US3798080A successfully refreshed from Google Patents.
US3798080A
Expired / Lapsed
US
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Method of producing a semiconductor component
Assignee: Siemens AG
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Filing: 1971-04-22
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Granted: 1974-03-19
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Expires: 1991-04-22
Abstract
Abstract In producing a semiconductor component, the use of a silicon nitride layer as an etching stencil, provides an exact positioning of various windows, relative one another, in a silicon dioxide layer, arranged on a semiconductor body. The method is particularly suitable for producing high-frequency transistors of comb structure in planar technology.
Inventors
- 👤 W Henning
- 👤 H Weidlich
- 👤 Hoerschelmann K Von
- 👤 I Kruger
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 21:22
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10D; H10D99/00; H10P; H10P95/00; H10W74/00; H10W74/40; Y; Y10; Y10S; Y10S148/00; Y10S148/113; Y10S148/114
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
26 words
The method of claim 1 wherein the silicon nitride layer is about 0.1 Mu thick and the silicon dioxide layer is at least 0.2 Mu thick.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-03-18 | 1977-09-17 | 1978-03-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-03-18 | 1981-09-17 | 1982-03-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-03-18 | 1985-09-17 | 1986-03-19 | $7700.00 | Window Closed / Lapsed |