Patent US3794883A successfully refreshed from Google Patents.
US3794883A
Expired / Lapsed
US
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Process for fabricating ge:hg infrared detector arrays and resulting article of manufacture
Assignee: Individual
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Filing: 1973-02-01
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Granted: 1974-02-26
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Expires: 1993-02-01
Abstract
Abstract An infrared detector array is fabricated by alloying a slice of mercury doped germanium to a degenerate germanium substrate. After being lapped to the desired thickness, the slice is etched through to the substrate to form individual detector bars using a metal mask which is then partially removed to form a gold contact strip on each bar. Output conductors are formed by patterning copper films thermocompression bonded to high temperature plastics, gold plating the conductors, and connecting the gold plated conductors to the gold contact strips by gold jumper wires thermocompression bonded to the conductors and to the contact strips.
Inventors
- 👤 E Bylander
- 👤 H Jarman
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 03:24
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/18; H10F39/184; H10F99/00; H10P; H10P50/00; H10P50/69; H10P50/691; H10P95/00; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/07531; H10W72/07532; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/536; H10W72/5363; H10W72/541; H10W72/547; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/90; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/754
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
21 words
The array of elements described in claim 1 wherein the semiconductor elements are mercury doped germanium bars for detecting infrared radiation.
Claim 2
Dependent Claim
40 words
The array of elements defined in claim 1 wherein each of said semiconductor elements is doped with impurities to define a P-N junction therein capable of emitting radiation, said P-N junction disposed substantially parallel to said surface of said substrate.
Claim 3
Dependent Claim
17 words
The array of elements defined in claim 1 wherein the semiconductor elements are gallium arsenide light emitters.
Claim 4
Dependent Claim
14 words
The array defined in claim 1 wherein the semiconductor elements are gallium arsenide lasers.
Claim 5
Dependent Claim
58 words
A semiconductor device comprising a degenerately doped substrate of a first semiconductor material and a plurality of semiconductor devices of different semiconductor material bonded to the substrate by an electrically and thermally conductive bonding material, said substrate having a continuous metal layer adjacent said bonding material effective to connect one surface of said plurality of devices in common.
Claim 6
Dependent Claim
20 words
The semiconductor device defined in claim 6 wherein the semiconductor devices are bonded to the substrate by a metal alloy.
Claim 7
Dependent Claim
45 words
The array of elements defined in claim 1 wherein said alloying means includes a mixture of heat activated bonding materials and conductivity affecting impurities, whereby responsive to application of heat said elements are alloyed to said substrate and said impurities are diffused into said elements.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-25 | 1977-08-27 | 1978-02-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-25 | 1981-08-27 | 1982-02-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-25 | 1985-08-27 | 1986-02-26 | $7700.00 | Window Closed / Lapsed |