US3369290A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making passivated semiconductor devices
Assignee: RCA Corp
•
Filing: 1964-08-07
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Granted: 1968-02-20
•
Expires: 1984-08-07
Abstract
No abstract record available.
Inventors
- 👤 Mayer Alfred
- 👤 Eric F Cave
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 02:05
CPC Classifications
H; H10; H10W; H10W90/00; H10D; H10D99/00; H10P; H10P10/00; H10P10/12; H10P54/00; H10P95/00; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/10; H10W10/17; H10W74/00; H10W74/10; H10W74/131; H10W74/40; H10W74/43; Y; Y10; Y10S; Y10S148/00; Y10S148/051; Y10S148/085; Y10T; Y10T29/00; Y10T29/51; Y10T29/5136; Y10T29/5137; Y10T29/5143; Y10T29/5145
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
182 words
A METHOD OF MAKING PASSIVATED SEMICONDUCTOR DEVICES WITH THE AID OF A WAFER OF SEMICONDUCTOR MATERIAL, HAVING A PN JUNCTION THEREIN SUBSTANTIALLY PARALLEL TO OPPOSED MAJOR SURFACES OF THE WAFER, AND A WAFER-LIKE ELECTRICAL CONDUCTIVE SUBSTRATE, SAID METHOD COMPRISING THE STEPS OF: FIXING ONE OF SAID MAJOR SURFACES OF SAID WAFER TO SAID SUBSTRATE TO FORM A COMBINED BLOCK, CUTTING A PLURALITY OF GROOVES IN SAID BLOCK, EACH OF SAID GROOVES EXTENDING THROUGH SAID WAFER AND INTO SAID SUBSTRATE, WHEREBY TO FORM A PLURALITY OF MESAS WITH A PORTION OF SAID PN JUNCTION IN EACH, PRESSING SOFTENED GLASS INTO SAID GROOVES, LAPPING SAID BLOCK TO REMOVE ANY OF SAID GLASS ADHERING TO THE TOPS OF SAID MESAS THEREBY EXPOSING SAID SEMICONDUCTOR MATERIAL OF THE SURFACE OF EACH OF SAID MESAS, METALLIZING SAID EXPOSED SURFACES OF SAID MESAS, FIXING AN ELECTRODE TO EACH OF SAD METALLIZED SURFACES OF SAID MESAS, AND CUTTING THROUGH SAID GLASS TRANSVERSLEY TO SAID SUBSTRATE, WHERE TO SEPARATE GLASS-SURROUNDED MESAS ON SAID BLOCK FROM EACH OTHER, EACH OF SAID GLASS SURROUNDED MESAS COMPRISING ONE OF SAID PASSIVATED SEMICONDUCTOR DEVICES.
Claim 2
Independent Claim
182 words
A METHOD OF MAKING PASSIVATED SEMICONDUCTOR DEVICES WITH THE AID OF A WAFER OF SEMICONDUCTOR MATERIAL, HAVING A PN JUNCTION THEREIN SUBSTANTIALLY PARALLEL TO OPPOSED MAJOR SURFACES OF THE WAFER, AND A WAFER-LIKE ELECTRICAL CONDUCTIVE SUBSTRATE, SAID METHOD COMPRISING THE STEPS OF: FIXING ONE OF SAID MAJOR SURFACES OF SAID WAFER TO SAID SUBSTRATE TO FORM A COMBINED BLOCK, CUTTING A PLURALITY OF GROOVES IN SAID BLOCK, EACH OF SAID GROOVES EXTENDING THROUGH SAID WAFER AND INTO SAID SUBSTRATE, WHEREBY TO FORM A PLURALITY OF MESAS WITH A PORTION OF SAID PN JUNCTION IN EACH, PRESSING SOFTENED GLASS INTO SAID GROOVES, LAPPING SAID BLOCK TO REMOVE ANY OF SAID GLASS ADHERING TO THE TOPS OF SAID MESAS THEREBY EXPOSING SAID SEMICONDUCTOR MATERIAL OF THE SURFACE OF EACH OF SAID MESAS, METALLIZING SAID EXPOSED SURFACES OF SAID MESAS, FIXING AN ELECTRODE TO EACH OF SAD METALLIZED SURFACES OF SAID MESAS, AND CUTTING THROUGH SAID GLASS TRANSVERSLEY TO SAID SUBSTRATE, WHERE TO SEPARATE GLASS-SURROUNDED MESAS ON SAID BLOCK FROM EACH OTHER, EACH OF SAID GLASS SURROUNDED MESAS COMPRISING ONE OF SAID PASSIVATED SEMICONDUCTOR DEVICES.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1971-02-19 | 1971-08-21 | 1972-02-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1975-02-19 | 1975-08-21 | 1976-02-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1979-02-19 | 1979-08-21 | 1980-02-20 | $7700.00 | Window Closed / Lapsed |