Patent US3792384A successfully refreshed from Google Patents.
US3792384A
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US
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Controlled loss capacitor
Assignee: Motorola Solutions Inc
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Filing: 1972-01-25
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Granted: 1974-02-12
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Expires: 1992-01-25
Abstract
Abstract A variable loss transmission line including conductive strips of polycrystalline silicon deposited on a substrate. The polycrystalline silicon is selectively doped with an impurity to vary the resistance of the strips, thereby varying the loss or attenuation characteristics of the transmission line.
Inventors
- 👤 R Hunt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 21:32
CPC Classifications
H; H01; H01P; H01P1/00; H01P1/22; H01P1/227; H01P3/00; H01P3/02; H01P3/08; H03; H03F; H03F3/00; H03F3/60; H10; H10W; H10W44/00; H10W44/401
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
71 words
A distributed parameter transmission line including in combination a layer of substrate material, a conductive strip deposited on said substrate, said conductive strip comprising polycrystalline semiconductor material with a first portion thereof having a resistivity of a first given value and a second portion thereof having a resistivity of a lower given value than said first given value to predeterminedly vary the attenuation of said second portion of the transmission line.
Claim 2
Dependent Claim
71 words
A distributed parameter transmission line including in combination a layer of substrate material, a conductive strip deposited on said substrate, said conductive strip comprising polycrystalline semiconductor material with a first portion thereof having a resistivity of a first given value and a second portion thereof having a resistivity of a lower given value than said first given value to predeterminedly vary the attenuation of said second portion of the transmission line.
Claim 3
Dependent Claim
17 words
A distributed parameter circuit element as recited in claim 1 wherein said conductive strip comprises polycrystalline silicon.
Claim 4
Dependent Claim
27 words
A distributed parameter circuit element as recited in claim 1 wherein said polycrystalline semiconductor material includes a predetermined amount of impurities for altering the resistivity thereof accordingly.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1977-02-11 | 1977-08-13 | 1978-02-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1981-02-11 | 1981-08-13 | 1982-02-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1985-02-11 | 1985-08-13 | 1986-02-12 | $7700.00 | Window Closed / Lapsed |