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US3787252A Expired / Lapsed US ⏱️ 0.0 years remaining

Connection means for semiconductor components and integrated circuits

Assignee: Bull HN Information Systems Italia SpA
•
Filing: 1971-11-08
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Granted: 1974-01-22
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Expires: 1991-11-08
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Abstract

Abstract In a semiconductor wafer having an epitaxial layer on which circuit elements are formed, through-connections for said circuit elements to contacts formed on the opposite surface of the layer are provided by tapered high conductivity semiconductor regions insulated from the body by a thin layer of dielectric material and in contact with suitably doped portions of the epitaxial layer to provide insulation by means of reversely biased junctions.

Inventors

  • 👤 F Filippazzi
  • 👤 F Forlani

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-24 09:28
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/60; H10W10/00; H10W10/01; H10W10/011; H10W10/019; H10W10/10; H10W20/00; H10W20/01; H10W20/021; H10W20/023; H10W20/20; H10W70/611; H10W72/00; H10W72/071; H10W72/072; H10W72/07231; H10W72/07236; Y; Y10; Y10S; Y10S148/00; Y10S148/085; Y10S148/122; Y10S148/145; Y10S438/00; Y10S438/928

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 59 words
The method of claim 1, wherein said step of forming at least one hole comprises the step of: etching at least one area of the first surface of the monocrystalline semiconductor wafer so as to form at least one hole; and limiting said etching step to an etching depth less than the total thickness of the monocrystalline semiconductor wafer.
Claim 2
Dependent Claim 55 words
The method of claim 2 whErein said etching step comprises: selectively etching the monocrystalline semiconductor wafer in order to enhance the etching depth in the direction of the wafer thickness in comparison to the directions parallel to the first surface from which said etching step is initiated so as to form a conical shaped hole.

References Cited (Backward Citations)

US3462650A Cited
US3427709A Cited
US3343256A Cited
US3456335A Cited
US3372070A Cited
US3440498A Cited
US3471922A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-01-21 1977-07-23 1978-01-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-01-21 1981-07-23 1982-01-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-01-21 1985-07-23 1986-01-22 $7700.00 Window Closed / Lapsed

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