Schottky barrier pressure sensitive semiconductor device with air space around periphery of metal-semiconductor junction

Claim 2

A pressure sensitive semiconductor device including four adjacent layers, three of which have two respective junctions therebetween and capable of transistor action, one of said outer layers being a metal layer forming a metal-semiconductor junction with an adjacent first semiconductor layer, and the other of said outer layers being a metal layer in ohmic contact with an adjacent second semiconductor layer, said first and second semiconductor layers forming a semiconductor-semiconductor junction therebetween, and means for applying pressure to said metal-semiconductor junction, wherein said metal-semiconductor junction is formed along the wall of a recess formed in said first semiconductor layer and said first semiconductor layer is provided with a closed space void of solid material at its periphery, said space extending to the base of said recess in said first semiconductor layer at the location where said metal semiconductor junction is formed and being surrounded by the wall of said recess, said one outer metal layer and an insulating layer being provided on the exposed surface of said first semiconductor layer.

Claim 3

A device according to claim 1, wherein the depth of said recess is at least 3,000 A, the lateral extension of said space is at least 1,000 A, and the thickness of said one outer metal layer is larger than the depth of said recess.

Claim 4

A transistor comprising: a semiconductor substrate having a recess formed in its major surface, an insulating film covering said major surface of said semiconductor substrate and having an opening therethrough exposing a major part of the bottom of said recess, said opening being disposed above said recess, the cross-sectional area of said opening being less than the cross-sectional area of said recess, so as to provide a separation space in said semiconductor substrate extending around the portion of the recess located underneath the insulating film, a Schottky barrier formed at the bottom of said recess including an emitter electrode layer covering the opening in said inSulating film and extending through said opening onto the bottom of said recess while leaving said separation space substantially vacant, said separation space extending to the base of said recess in said semiconductor substrate at the location where said Schottky barrier is formed, so that said Schottky barrier is surrounded by the separation space extending around the recess, and at least one base electrode layer, deposited through a hole opened through the insulating film and located on the same side of said substrate as said emitter electrode layer so as to make ohmic contact with the substrate, and including means for applying pressure to said Schottky barrier.

Claim 5

A transistor comprising: a semiconductor substrate having a recess formed in its major surface, an insulating film covering said major surface of said semiconductor substrate and having an opening therethrough exposing a major part of the bottom of said recess, said opening being disposed above said recess, the cross-sectional area of said opening being less than the cross-sectional area of said recess, so as to provide a separation space in said semiconductor substrate extending around the portion of the recess located underneath the insulating film, a Schottky barrier formed at the bottom of said recess including an emitter electrode layer covering the opening in said inSulating film and extending through said opening onto the bottom of said recess while leaving said separation space substantially vacant, said separation space extending to the base of said recess in said semiconductor substrate at the location where said Schottky barrier is formed, so that said Schottky barrier is surrounded by the separation space extending around the recess, and at least one base electrode layer, deposited through a hole opened through the insulating film and located on the same side of said substrate as said emitter electrode layer so as to make ohmic contact with the substrate, and including means for applying pressure to said Schottky barrier.

Claim 6

A transistor according to claim 3, wherein the width of said separation space is at least 1,000 A.

Claim 7

A transistor according to claim 3, wherein the insulating film is made of silicon dioxide, and the emitter electrode layer is a molybdenum film.

Claim 8

A transistor according to claim 3, further including a collector electrode layer formed on said substrate on the side thereof opposite to the side on which said emitter layer is formed.

Claim 9

A Schottky barrier type transistor comprising: a semiconductor substrate having a recess formed in a base region thereof, an insulating film covering a major surface portion of said semiconductor substrate and having an opening therethrough exposing a major part of the bottom of said recess, said opening being disposed above said recess, the cross-sectional area of said opening being less than the cross-sectional area of said recess, so as to provide a separation space in said semiconductor substrate extending around the recess and located underneath the insulating film, A Schottky barrier formed at the bottom of said recess including a first metal layer covering the opening in said insulating film and extending through said opening onto the bottom of said recess and the surrounding insulating film while leaving said separation space substantially vacant, said separation space extending to the base of said recess in said semiconductor substrate at the location where said Schottky barrier is formed, so that said Schottky barrier is surrounded by the separation space extending around the recess, another metal layer deposited through a hole opened through the insulating film, so as to make ohmic contact with the base region, a further metal layer deposited on the part other than the base region of the substrate, so as to make ohmic contact therewith, and means for applying pressure to said Schottky barrier.

Claim 10

A Schottky barrier type transistor comprising: a semiconductor substrate having a recess formed in a base region thereof, an insulating film covering a major surface portion of said semiconductor substrate and having an opening therethrough exposing a major part of the bottom of said recess, said opening being disposed above said recess, the cross-sectional area of said opening being less than the cross-sectional area of said recess, so as to provide a separation space in said semiconductor substrate extending around the recess and located underneath the insulating film, A Schottky barrier formed at the bottom of said recess including a first metal layer covering the opening in said insulating film and extending through said opening onto the bottom of said recess and the surrounding insulating film while leaving said separation space substantially vacant, said separation space extending to the base of said recess in said semiconductor substrate at the location where said Schottky barrier is formed, so that said Schottky barrier is surrounded by the separation space extending around the recess, another metal layer deposited through a hole opened through the insulating film, so as to make ohmic contact with the base region, a further metal layer deposited on the part other than the base region of the substrate, so as to make ohmic contact therewith, and means for applying pressure to said Schottky barrier.

Claim 11

A transistor according to claim 7, wherein the width of said separation space is at least 1,000 A.

Claim 12

A transistor according to claim 7, wherein the insulating film is made of silicon dioxide, and the first metal layer is a molybdenum film.

Claim 13

A transistor according to claim 3, wherein said pressure applying means comprises a pressure applying stylus contacting said first layer.

Claim 14

A transistor according to claim 7, wherein said pressure applying means comprises a stylus contacting said first metal layer.