Patent US3786294A successfully refreshed from Google Patents.
← Back to Patent Explorer
US3786294A Expired / Lapsed US ⏱️ 0.0 years remaining

Protective coating for diode array targets

Assignee: General Electric Co
•
Filing: 1971-02-22
•
Granted: 1974-01-15
•
Expires: 1991-02-22
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

Abstract An improved coating for diode array targets is disclosed wherein a resistive sea is coated over the diode array. The resistive sea has a thickness of from 10 to 1000A and a resistivity of from 5 X 105 to 109 ohm-centimeters. The resistive sea comprises an electronically conductive borate glass containing an oxide of a metal, e.g. iron, vanadium, cobalt, etc. This layer has been found to serve a protective function and, in particular, serves to prevent an increase in the dark current of the array due to ''''aging'''' effects or due to vacuum baking of the array in preparation for use as an image intensifier.

Inventors

  • 👤 R Wilson
  • 👤 J Rosczak
  • 👤 S Blumenfeld
  • 👤 R Redington

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-27 17:32
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/201; H10D84/204; H10D84/221; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/453; H01J29/455; H10D1/00; H10D1/40; H10D1/47; H10D99/00; H10P; H10P14/00; H10P14/60; H10P95/00

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 19 words
A diode array target as set forth in claim 1 wherein said resistive sea comprises a electrically conductive glass.
Claim 2
Dependent Claim 23 words
A diode array target as set forth in claiM 1 wherein said resistive sea comprises a layer of electrically conductive glass 10-1000A thick.
Claim 3
Dependent Claim 103 words
A diode array target comprising: a semiconductive wafer of a first conductivity type; an insulating layer overlying the surface of said wafer and containing a plurality of apertures; a multitude of regions of second conductivity type intersecting said surface of said semiconductive wafer to form a multitude of junctions therewith, said regions extending through said apertures and overlying portions of said insulating layer; and a layer of electrically conductive glass 10-1000A thick deposited atop said target for dissipating charge stored in said insulating layer, minimizing changes in dark current of the target, and improving the uniformity of response of said diode array target.
Claim 4
Dependent Claim 29 words
A diode array target according to claim 4 wherein said glass is an electronically conducting borate glass having a room temperature resistivity between 5 X 105 and 109 ohm-cm.
Claim 5
Dependent Claim 99 words
A diode array target according to claim 5 wherein said glass contains 20 to 40 mole percent of an alkaline earth metal oxide and an oxide of a metal selected from the group consisting of chromium, iron, antimony, vanadium, titanium, nickel, cobalt, manganese, molybdenum, tungsten, arsenic and mixtures thereof, said oxide of the selected metal being present in the glass in an amount of at least 15 mole percent on the basis of the alkaline metal earth boron content of the glass and providing in the glass metal ions of a higher valence state and a lower valence state.

References Cited (Backward Citations)

GB679846A Cited
US3011089A Cited
US3258434A Cited
US3437890A Cited
US3419746A Cited
US3585430A Cited
US3548233A Cited
DE2020355A1 Cited
US3664895A Cited
US3668473A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1977-01-14 1977-07-16 1978-01-15 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1981-01-14 1981-07-16 1982-01-15 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1985-01-14 1985-07-16 1986-01-15 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag