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US3781806A
Expired / Lapsed
US
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Semiconductor switching element and a semiconductor switching involving the same
Assignee: NTT Inc
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Filing: 1972-01-24
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Granted: 1973-12-25
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Expires: 1992-01-24
Abstract
Abstract A semiconductor switching element and a semiconductor switching device involving the same which comprise at least one collector region diffused in a semiconductor substrate from its surface, containing a high concentration of impurities having the same type of conductivity as said substrate and displaying a higher degree of said conductivity than said substrate and formed into a fully narrow area, a base region diffused at a space of approximately 50 microns max. from said collector region, as measured from the same surface of said semiconductor substrate as that on which there is formed said collector region, in a manner to make the edge of said base region facing said collector region sufficiently longer than that of said collector region and containing a high concentration of impurities having the same type of conductivity as said semiconductor substrate and displaying a higher degree of said conductivity than said semiconductor substrate and at least one emitter region diffused from the same surface of said semiconductor substrate as that through which the aforesaid two regions are diffused and having an opposite type of conductivity to said semiconductor substrate.
Inventors
- 👤 Y Mizushima
- 👤 I Sudo
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:10
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/082; H03K17/00; H03K17/51; H03K17/56; H03K17/72; H03K17/78; H03K17/79; H10; H10B; H10B99/00; H10D; H10D99/00
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
357 words
A semiconductor switching device comprising: a plurality of columns of conductors in contact with one surface of the semiconductor substrate; a plurality of rows of conductors in contact with said one surface in a crossing direction of said columns to form a matrix, each cross-point having at least one semiconductor switching element coupled thereto, each switching element including a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max. and being spaced from said base region at an interval of approXimately 50 microns max., the edge of said base region facing that of the collector region being at least ten times longer than the latter, and the emitter region being disposed between said collector and base regions and substantially near the base region; means for coupling a first power source across said collector and emitter electrodes of said at least one semiconductor switching element; means for coupling a second power source across said collector and base electrodes of said at least one switching element; a load disposed in a current path between said emitter and collector electrodes of said at least one switching element; and control means for supplying said at least one switching element with signals for controlling the state of said switching element to thereby control the switching of current to said load.
Claim 2
Dependent Claim
357 words
A semiconductor switching device comprising: a plurality of columns of conductors in contact with one surface of the semiconductor substrate; a plurality of rows of conductors in contact with said one surface in a crossing direction of said columns to form a matrix, each cross-point having at least one semiconductor switching element coupled thereto, each switching element including a semiconductor substrate; at least one collector region diffused in said substrate from a predetermined surface of said substrate, said collector region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate and being so formed as to have a substantially small effective area; a base region diffused in said substrate such that the edge of said base region facing that of said collector region is substantially longer than the latter, said base region containing a high concentration of impurities imparting thereto the same type of conductivity as said substrate and displaying a higher degree of conductivity than said substrate; at least one emitter region diffused in said substrate between said base and collector regions and having an opposite type of conductivity as said substrate; said collector region having an effective area of approximately (20 microns)2 max. and being spaced from said base region at an interval of approXimately 50 microns max., the edge of said base region facing that of the collector region being at least ten times longer than the latter, and the emitter region being disposed between said collector and base regions and substantially near the base region; means for coupling a first power source across said collector and emitter electrodes of said at least one semiconductor switching element; means for coupling a second power source across said collector and base electrodes of said at least one switching element; a load disposed in a current path between said emitter and collector electrodes of said at least one switching element; and control means for supplying said at least one switching element with signals for controlling the state of said switching element to thereby control the switching of current to said load.
Claim 3
Dependent Claim
98 words
A semiconductor switching device according to claim 1 wherein said first and second power sources are D.C. power sources, said first D.C. power source generating a drift field in the body of said at least one switching element, said second D.C. power source generating a bias voltage acting in a forward direction in said at least one switching element, said load being coupled in series with said first D.C. source, and wherein said control means includes a control pulse signal source for selectively supplying said switching element with pulse signals for controlling the state of said switching element.
Claim 4
Dependent Claim
55 words
A semiconductor switching device according to claim 2 wherein said control means further comprises a light source for selectively projecting light to the interspace between at least the emitter and collector regions of said at least one semiconductor switching element for controlling the introduction of minority carriers into said collector region from said emitter region.
Claim 5
Dependent Claim
37 words
A semiconductor switching device according to claim 2 wherein said control pulse signal source is so connected as to supply control pulse signals to a current path between said emitter and collector electrodes of said switching element.
Claim 6
Dependent Claim
37 words
A semiconductor switching device according to claim 2 wherein said control pulse signal source is so connected as to supply control pulse signals to a current path between said base and collector electrodes of said switching element.
Claim 7
Dependent Claim
37 words
A semiconductor switching device according to claim 3 wherein said control pulse signal source is so connected as to supply control pulse signals to a current path between said emitter and collector electrodes of said switching element.
Claim 8
Dependent Claim
37 words
A semiconductor switching device according to claim 3 wherein said control pulse signal source is so connected as to supply control pulse signals to a current path between said base and collector electrodes of said switching element.
Claim 9
Dependent Claim
49 words
A semiconductor switching device according to claim 3 wherein said control pulse signal source is so connected as to supply control pulse signals to a current path between said emitter and collector regions and to a current path between said base and collector regions of said switching element respectively.
Claim 10
Dependent Claim
49 words
A semiconductor switching device according to claim 1 wherein said control pulse signal source is so connected as to supply control pulse signals to a current path between said emitter and collector regions and to a current path between said base and collector regions of said switching element, respectively.
Claim 11
Dependent Claim
170 words
A semiconductor switching device according to claim 1 comprising a plurality of said semiconductor switching elements arranged in a matrix form, one of the collector, base and emitter electrodes of each switching element being coupled together with those of other of said switching elements as a common electrode for inputs and outputs to and from said matrix, one of the remaining two electrodes of each of said switching elements being coupled to those of other of said switching elements by row conductors to form respective row lines in said matrix, and the other of said remaining two Electrodes of each of said switching elements being coupled together with those of other of said switching elements by column conductors to form respective column lines, and wherein said means for coupling said first power source includes a first line selection circuit and said means for coupling said second power source includes a second line selection circuit, said line selection circuits supplying control signals for selectively controlling the states of said switching elements.
Claim 12
Dependent Claim
57 words
A semiconductor switching device according to claim 10 wherein said control means further comprises a light source for selectively projecting light to the interspace between at least the emitter and collector regions of each of the semiconductor switching elements of said matrix for controlling the introduction of minority carriers into said collector regions from said emitter region.
Claim 13
Dependent Claim
38 words
A semiconductor switching device according to claim 10 wherein one of said emitter and collector regions is split into at least two divisions, and readout means coupled to one of the divisions of each of said split regions.
Claim 14
Dependent Claim
233 words
A semiconductor switching device according to claim 1 comprising a plurality of said semiconductor switching elements arranged in a matrix form, and wherein one of said emitter and collector regions being split into at least two divisions, one of the four electrodes associated with said collector, base and emitter regions of each switching element being coupled together with those of other of said switching elements as a common electrode for inputs and outputs to and from said matrix, one of the remaining three electrodes of each of said switching elements being coupled to those of other of said switching elements by row conductors to form respective row lines in said matrix, the second of said remaining three electrodes of each of said switching elements being coupled together with those of other of said switching elements by column conductors to form respective column lines, and the third of said remaining three electrodes of each of said switching elements being coupled to those of other of said switching elements in a row or column, and said third of said remaining three electrodes being connected to a readout means, and wherein said means for coupling said first power source includes a first line selection circuit and said means for coupling said second power source includes a second line selection circuit, said line section circuits supplying control signals for selectively controlling the states of said switching elements.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-12-24 | 1977-06-25 | 1977-12-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-12-24 | 1981-06-25 | 1981-12-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-12-24 | 1985-06-25 | 1985-12-25 | $7700.00 | Window Closed / Lapsed |