Double injection diode matrix switch

Claim 1

A matrix of double injection diodes arranged on a common substrate of semiconductor material, said material having an injected carrier density greater than the free carrier density at normal operating voltages, said matrix providing a light sensitive cross point switch comprising: a plurality of columns of conductors in contact with one side of said substrate; a plurality of rows of conductors in contact with said one side of said substrate in a direction transverse to the direction of said columns and crossing over said columns, at least one of said row and column conductors at each cross over point extending over a surface portion of said substrate, a part of each conductor of said row being separated from a part of an associated conductor of said column by another surface portion of said substrate, said other surface portion forming a diode gap for a double injection diode associated therewith, said row and column conductor parts forming two metal injection contacts for said double injection diode associated therewith; an insulating region disposed between said rows and columns of conductors at each crossover point; and means for biasing said double injection diodes to a voltage level less than the voltage required to switch said double injection diodes from their normally low conduction state to a high conduction state, said double injection diodes responding to the application of suitable incident light to switch into said high conduction state.