Patent US3770988A successfully refreshed from Google Patents.
US3770988A
Expired / Lapsed
US
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Self-registered surface charge launch-receive device and method for making
Assignee: General Electric Co
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Filing: 1970-09-04
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Granted: 1973-11-06
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Expires: 1990-09-04
Abstract
Abstract A device for launching, receiving and amplifying surface charges from a conductor-insulator-semiconductor (CIS) structure and a method for making the device are disclosed. In one embodiment the device includes a double-diffused region wherein the outer diffused region extends under and is adjacent to a conductor member of a storage element. Surface charges adjacent the doublediffused region forwardly bias the outer diffused region relative to the inner diffused region and cause current multiplication. The effective gain obtained from this device is approximately equal to the forward current gain of a bipolar transistor. In another embodiment a single diffused region extends under a conductor member of a storage element to launch surface charges into and to receive surface charges from a storage element. A method for making both type devices self-registered with the storage element is also disclosed.
Inventors
- 👤 W Engeler
- 👤 J Tiemann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 05:59
CPC Classifications
G; G11; G11C; G11C19/00; G11C19/28; G11C19/282; G11C19/285; H; H10; H10D; H10D44/00; H10D44/40; H10D44/45; H10D44/452; H10D44/454
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
211 words
In combination, a substrate of semiconductor material of one conductivity type having a surface adjacent portion, a first conductive member insulatingly overlying a first region of the surface adjacent portion of said substrate, a second region in the surface adjacent portion of said substrate of opposite conductivity type contiguous with said first region, a third region of one type conductivity within said second region of opposite conductivity type to form a transistor in which said third region is the emitter, said second region is the base and said substrate is the collector, means for applying a first biasing voltage to said first conductive member with respect to said substrate to establish a surface potential of a first value therein, means for applying a second voltage in circuit with said third region and said substrate to reversely bias said second region with respect to said substrate and electrically float said second region with a potential of a second value thereon, means for conducting minority carriers representing a signal along said surface adjacent portion into said second region through said first region, means connected in circuit with said third region and said substrate for sensing the change in voltage on said second region in response to the flow of said minority carriers thereinto.
Claim 2
Dependent Claim
211 words
In combination, a substrate of semiconductor material of one conductivity type having a surface adjacent portion, a first conductive member insulatingly overlying a first region of the surface adjacent portion of said substrate, a second region in the surface adjacent portion of said substrate of opposite conductivity type contiguous with said first region, a third region of one type conductivity within said second region of opposite conductivity type to form a transistor in which said third region is the emitter, said second region is the base and said substrate is the collector, means for applying a first biasing voltage to said first conductive member with respect to said substrate to establish a surface potential of a first value therein, means for applying a second voltage in circuit with said third region and said substrate to reversely bias said second region with respect to said substrate and electrically float said second region with a potential of a second value thereon, means for conducting minority carriers representing a signal along said surface adjacent portion into said second region through said first region, means connected in circuit with said third region and said substrate for sensing the change in voltage on said second region in response to the flow of said minority carriers thereinto.
Claim 3
Dependent Claim
27 words
The combination of claim 1 in which the potential of said second value is energetically lower than the potential of said first value for said charge carriers.
Claim 4
Dependent Claim
50 words
The combination of claim 1 in which said charge carriers are in the form of packets of charge having a spatial periodicity, in which said means for conducting said charge carriers includes means for shifting each of said packets of charge carriers into said first rEgion at a predetermined rate.
Claim 5
Dependent Claim
30 words
The combination of claim 1 in which said means for sensing includes a load impedance in circuit with said third region and a source of bias potential for said transistor.
Claim 6
Dependent Claim
103 words
The combination of claim 1 in which said means for conducting charge carriers includes a plurality of spaced conductor members insulatingly overlying the surface adjacent portion of said substrate to form an information storage and transfer channel for the transfer of electrical charges along the surface adjacent portion of said substrate, means for applying depletion producing voltages to said conductor members to form progressing depletion regions in the surface adjacent portion of said substrate to effect the transfer of charge along said channel, means for coupling charge from one of the depletion regions of said storage and transfer channel into said first region.
Claim 7
Dependent Claim
162 words
The combination of claim 1 in which said means for conducting charge carriers includes a first plurality of spaced conductor members insulatingly overlying the surface adjacent portion of said substrate and in insulating relationship therewith, and a second plurality of spaced conductor members insulatingly overlying the conductor members of said first plurality of conductor members with each of said second conductor members overlapping two adjacently spaced conductor members of said first plurality of conductor members to form an information storage and transfer channel for the transfer of electrical charges along the surface-adjacent portion of said substrate, means for applying a first pair of phase related voltages to said first plurality of conductor members and means for applying a second pair of phase related voltages to said second plurality of conductor means to incrementally move stored charge in said storage and transfer channel, means for coupling charge from one of said depletion regions of said storage and transfer channel into said first region.
Claim 8
Dependent Claim
21 words
The combination of claim 6 in which said first conductive member is included in said first plurality of spaced conductor members.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-05 | 1977-05-07 | 1977-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-05 | 1981-05-07 | 1981-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-05 | 1985-05-07 | 1985-11-06 | $7700.00 | Window Closed / Lapsed |