Semiconductor circuit module for a high-gain, high-input impedance amplifier

Claim 1

A SEMICONDCUTOR CIRCUIT MODULE FOR A HIGH-GAIN, HIGH INPUT IMPEDANCE AMPLIFIER, WHICH COMPRISES: AN EXTERNAL, INSULATED-GATE FIELD-EFFECT DEVICE HAVING A SOURCE, A DRAIN, AND AN INSULATED GATE, SAID DEVICE INCLUDING A SUBSTRATE OF ONE CONDUCTIVITY TYPE, A PAIR OF REGIONS FORMED BY DIFFUSION IN SAID SUBSTRATE AND EXTENDING TO THE SURFACE THEREOF, ONE BEING A SOURCE AND THE OTHER A DRAIN, SAID REGIONS BEING OF THE OPPOSITE CONDUCTIVITY TYPE FROM SAID SUBSTRATE AND DEFINING A CHANNEL REGION THEREBETWEEN, AN INSULATING LAYER DISPOSED ON THE SURFACE OF SAID CHANNEL BETWEEN SAID REGIONS AND A METALLIC ELECTRODE FORMED ON SAID INSULATING LAYER, A TRANSISTOR HAVING A COLLECTOR OF ONE CONDUCTIVITY TYPE WHICH IS SAID SUBSTRATE, A BASE OF THE OPPOSITE CONDUCTIVITY TYPE, WHICH IS ONE OF SAID PAIR OF REGIONS, AN AN EMITTER OF SAID ONE CONDUCTIVITY TYPE, SAID EMITTER COMPRISING A THIRD DIFFUSED REGION FORMED WITHIN SAID ONE OF SAID REGIONS AND EXTENDING TO THE SURFACE THEREOF, SAID EMITTER BEING OF THE SAME CONDUCTIVITY TYPE AS SAID SUBSTRATE, MEANS COUPLING THE OTHER OF SAID PAIR OF REGIONS TO SAID SUBSTRATE, SAID MEANS COMPRISING A COMMON ELECTRODE IN CONTACT WITH BOTH THE OTHER OF SAID DRAIN AND SAID SUBSTRATE, MEANS FOR APPLYING A DIRECT COUPLED INPUT SIGNAL TO SAID METALLIC ELECTRODE, AND AN OUTTPUT ELECTRODE COUPLED TO SAID EMITTER REGION.