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US3770520A Expired / Lapsed US ⏱️ 0.0 years remaining

Production of semiconductor integrated-circuit devices

Assignee: KYODO DENSHI GIJUTSU KENKYUSHO
•
Filing: 1969-06-23
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Granted: 1973-11-06
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Expires: 1989-06-23
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Abstract

Abstract A semiconductor integrated-circuit device in which, on a semiconductor substrate of a first conductivity type, a number of semiconductor regions of a conductivity type different from the first conductivity type are disposed and are surrounded around their side surfaces by polycrystalline layers within which is diffused an impurity imparting a conductivity different from that of the semiconductor regions, whereby the difference in diffusion velocities of impurities in single crystals and in polycrystalline structures is utilized

Inventors

  • 👤 Y Kabaya
  • 👤 H Ikeda

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-07 09:41
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W10/00; H10W10/01; H10W10/041; H10W10/40; Y; Y10; Y10S; Y10S148/00; Y10S148/037; Y10S148/085; Y10S148/122; Y10S438/00; Y10S438/969

Claims Analysis

Total Claims: 1
Claim 1
Independent Claim 49 words
A method according to claim 1, in which said impurity imparting said first conductivity type to said polycrystal layer is diffused therein at the same time as said diffused regions and the diffusion velocity is greater in said polycrystal layer thereby isolating the single-crystal areas of said single-crystal layer.

References Cited (Backward Citations)

US3260902A Cited
US3475661A Cited
US3396456A Cited
US3514676A Cited
US3617826A Cited
US3607466A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-11-05 1977-05-07 1977-11-06 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-11-05 1981-05-07 1981-11-06 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-11-05 1985-05-07 1985-11-06 $7700.00 Window Closed / Lapsed

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