US3769693A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for preparing nuclear hardened semiconductor and microelectronic devices
Assignee: Lockheed Martin Corp
•
Filing: 1971-07-16
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Granted: 1973-11-06
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Expires: 1991-07-16
Abstract
Abstract A process for preparing nuclear hardened semiconductor or microelectronic devices comprising: 1. DETERMINING THE ELECTRICAL CHARACTERISTICS OF SEMICONDUCTOR OR MICROELECTRONIC DEVICES; 2. DESIGNATING THE ELECTRICALLY ACCEPTABLE SEMI-CONDUCTOR OR MICROELECTRONIC DEVICES; 3. EXPOSING SAID ACCEPTABLE SEMICONDUCTOR OR MICRO-ELECTRONIC DEVICES TO A NEUTRON ENVIRONMENT; 4. DETERMINING THE ELECTRICAL CHARACTERISTICS OF SAID EXPOSED SEMICONDUCTOR OR MICROELECTRONIC DEVICES; AND 5. ANNEALING THE NEUTRON ENVIRONMENT ELECTRICALLY ACCEPTABLE SEMICONDUCTOR OR MICROELECTRONIC DEVICES IS DISCLOSED.
Inventors
- 👤 H Cates
- 👤 R Darling
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 16:57
CPC Classifications
H; H10; H10P; H10P95/00; H10P34/00; Y; Y10; Y10S; Y10S438/00; Y10S438/953
Claims Analysis
Total Claims: 23
Claim 1
Independent Claim
59 words
A process for preparing nuclear hard semiconductor or microelectronic devices comprising: 1. determining the electrical characteristics of said devices, 2. subjecting said devices having acceptable electrical characteristics to neutron radiation, 3. determining the electrical characteristic of said irradiated devices, 4. annealing said devices having acceptable electrical characteristics at a temperature ranging from about 225* C to about 700* C.
Claim 2
Dependent Claim
59 words
A process for preparing nuclear hard semiconductor or microelectronic devices comprising: 1. determining the electrical characteristics of said devices, 2. subjecting said devices having acceptable electrical characteristics to neutron radiation, 3. determining the electrical characteristic of said irradiated devices, 4. annealing said devices having acceptable electrical characteristics at a temperature ranging from about 225* C to about 700* C.
Claim 3
Dependent Claim
10 words
subjecting said devices having acceptable electrical characteristics to neutron radiation,
Claim 4
Dependent Claim
10 words
subjecting said devices having acceptable electrical characteristics to neutron radiation,
Claim 5
Dependent Claim
14 words
The process of claim 1 wherein said semiconductor is silicon, germanium or gallium arsenide.
Claim 6
Dependent Claim
11 words
marking the individual dice of said semiconductor having unacceptable electrical characteristics,
Claim 7
Dependent Claim
11 words
marking the individual dice of said semiconductor having unacceptable electrical characteristics,
Claim 8
Dependent Claim
6 words
subjecting said semiconductor to neutron radiation
Claim 9
Dependent Claim
6 words
subjecting said semiconductor to neutron radiation
Claim 10
Dependent Claim
21 words
The process of claim 1 wherein said annealing is at a temperature of from about 400* C to about 550* C.
Claim 11
Dependent Claim
8 words
determining the electrical characteristic of said irradiated devices,
Claim 12
Dependent Claim
8 words
determining the electrical characteristic of said irradiated devices,
Claim 13
Dependent Claim
19 words
annealing said devices having acceptable electrical characteristics at a temperature ranging from about 225* C to about 700* C.
Claim 14
Dependent Claim
19 words
annealing said devices having acceptable electrical characteristics at a temperature ranging from about 225* C to about 700* C.
Claim 15
Dependent Claim
13 words
The process of claim 1 wherein said device is annealed more than once.
Claim 16
Dependent Claim
12 words
determining the electrical characteristics of the individual dice of said irradiated semiconductor
Claim 17
Dependent Claim
12 words
determining the electrical characteristics of the individual dice of said irradiated semiconductor
Claim 18
Dependent Claim
12 words
marking the individual dice of said semiconductor having unacceptablE electrical characteristics, and
Claim 19
Dependent Claim
12 words
marking the individual dice of said semiconductor having unacceptablE electrical characteristics, and
Claim 20
Dependent Claim
8 words
A process for preparing nuclear hard semiconductor comprising:
Claim 21
Dependent Claim
8 words
A process for preparing nuclear hard semiconductor comprising:
Claim 22
Dependent Claim
23 words
annealing the individual dice of said semiconductor having acceptable electrical characteristics at a temperature ranging from about 225* C to about 700* C.
Claim 23
Dependent Claim
23 words
annealing the individual dice of said semiconductor having acceptable electrical characteristics at a temperature ranging from about 225* C to about 700* C.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-11-05 | 1977-05-07 | 1977-11-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-11-05 | 1981-05-07 | 1981-11-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-11-05 | 1985-05-07 | 1985-11-06 | $7700.00 | Window Closed / Lapsed |