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US3769104A
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Method of preventing autodoping during the epitaxial growth of compound semiconductors from the vapor phase
Assignee: Hitachi Ltd
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Filing: 1971-03-19
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Granted: 1973-10-30
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Expires: 1991-03-19
Abstract
Abstract A method of epitaxially growing compound semiconductors from the vapor phase, wherein a dual layer of an insulating glass layer, such as SiO2 or Si3 N4 and Si is deposited on the entire surface of a germanium or III-V compound semiconductor substrate by a chemical vapor phase deposition method, the dual layer on the germanium or III-V compound semiconductor substrate surface is mechanically removed, and then a compound semiconductor is epitaxially grown on the substrate surface.
Inventors
- 👤 H Kasano
- 👤 K Kurata
- 👤 Y Ono
- 👤 M Ogirima
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 05:51
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2907; H10P14/2911; H10P14/32; H10P14/3202; H10P14/3238; H10P14/3404; H10P14/3411; H10P14/3418; H10P14/36; Y; Y10; Y10S; Y10S148/00; Y10S148/007; Y10S148/072; Y10S148/122; Y10S438/00; Y10S438/914; Y10S438/916; Y10S438/974
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
21 words
A method according to claim 1, wherein said insulating glass is one selected from the group consisting of SiO2 and Si3N4.
Claim 2
Dependent Claim
18 words
A method according to claim 1, wherein said substrate is germanium and said insulating glass layer is SiO2.
Claim 3
Dependent Claim
19 words
A method according to claim 1, wherein said substrate is selected from the group consisting of germanium and GaAs.
Claim 4
Dependent Claim
11 words
A method according to claim 1, wherein said substrate is GaAs.
Claim 5
Dependent Claim
20 words
A method according to claim 5, wherein said insulating glass is selected from the group consisting of SiO2 and Si3N4.
Claim 6
Dependent Claim
30 words
A method according to claim 1, wherein said epitaxially grown compound semiconductor is at least one selected from the group consisting of GaP, GaAs, and GaAs1 xPx, wherein O x<1.
Claim 7
Dependent Claim
22 words
A method according to claim 1, wherein said dual layer is formed of an insulating glass consisting of SiO2 and polycrystalline silicon.
Claim 8
Dependent Claim
22 words
A method according to claim 1, wherein said dual layer is formed of an insulating glass consisting of Si3N4 and polycrystalline silicon.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-29 | 1977-04-30 | 1977-10-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-29 | 1981-04-30 | 1981-10-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-29 | 1985-04-30 | 1985-10-30 | $7700.00 | Window Closed / Lapsed |