Method for producing improved pn junction
Abstract
Abstract A novel method for producing improved PN junctions of the diffusion type, having wide applicability in the field of semiconductor devices. PN junctions produced by the method of this invention possess superior characteristics, including reduced leakage, higher breakdown voltage and reduced surface inversion effects. The present invention substantially reduces the level of contaminants which, heretofore, were typically trapped in the vicinity of PN diffusion junctions, adversely affecting the quality of the junctions. In this novel method, diffusion of the junction and oxidation of the surface take place concurrently in a single heating step which takes place after the step of cutting or etching mesas in the semiconductor structure.
Inventors
- 👤 A Sahagun
Bibliographic Details
Claims Analysis
Total Claims: 0References Cited (Backward Citations)
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