Fabrication process for light sensitive silicon diode array target

Abstract

Abstract IN THE FABRICATION OF SILICON DIODE ARRAY TARGETS FOR VIDEO CAMERA TUBES THE INITIAL PN JUNCTION DIODE DIFFUSION HEAT TREATMENTS USING A BORON SOURCE, PRODUCES A P TYPE SHEET RESISTANCE IN THE RANGE OF 10 TO 500 OHMS PER SQUARE. VALUES BELOW THIS RANGE PRODUCE A BORON RICH GLASS WHICH IS DIFFICULT TO REMOVE WITHOUT PRODUCING DEFECTS. VALUES ABOVE THIS RANGE DO NOT PRODUCE SUFFICIENT BORON RICH GLASS TO BE EFFECTIVE IN GETTERING CERTAIN IMPURITIES. THIS DIFFUSION IS FOLLOWED BY TREATMENT AT A TEMPERATURE COMPARABLE TO THE DIFFUSION TEMPERATURE, FOR AN APPRECIABLE PERIOD IN A NITROGEN ATMOSPHERE TO MINIMIZE THE OCCURRENCE OF CERTAIN DEFECTS. THE HEAT TREATMENT OF THE SEMICONDUCOR SLICE MAY, ALTERNATIVELY, TERMINATE WITH A RAPID COOLING OR QUENCHING STEP. FOLLOWING THE SECOND IMPURITY DIFFUSION INTO THE LIGHT SENSITIVE FACE OF THE TARGET AN ANNEALING TREATMENT IS PERFORMED FOR ABOUT ONE HOUR AT A RELATIVELY LOW TEMPERATURE IN A REDUCING ATMOSPHERE, TYPICALLY HYDROGEN, TO MINIMIZE DARK CURRENT.

Inventors

• 👤 William E Beadle
• 👤 Kenneth E Benson
• 👤 James R Mathews
• 👤 Louis H Von Ohlsen Jr

Bibliographic Details