Patent US3766450A successfully refreshed from Google Patents.
US3766450A
Expired / Lapsed
US
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Thyristor
Assignee: Siemens AG
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Filing: 1972-08-14
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Granted: 1973-10-16
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Expires: 1992-08-14
Abstract
Abstract A thyristor comprising a four-layer, monolithic device, which includes an emitter, a base, a second base below said base and a bottom layer forming an anode, a gate electrode on an exposed surface of said base, an auxiliary emitter laterally spaced from said emitter and forming with said base and said other layers an auxiliary thyristor, said second base having an area below the gate electrode and out to a point below an outer edge of the auxiliary emitter of higher impurity concentration than the remaining portion of said base. The auxiliary emitter is provided with an electrode which contacts its upper surface remote from the gate electrode and is in contact with the base. The emitter is provided with an electrode in contact with its upper surface remote from the auxiliary emitter and in contact with the base. By having the region of the second base underlying the gate electrode to a point below and inwardly of the outer edge of the auxiliary emitter of lower resistivity than that underlying the main emitter, the forward breakover voltage of the auxiliary thyristor is reached and the auxiliary thyristor ignited before any voltage is reached which would cause a direct triggering or gating of the main thyristor by a forward breakover voltage. The current flowing in the auxiliary thyristor thus causes a normal gating of the main thyristor as would be done by a gate electrode.
Inventors
- 👤 P Voss
- 👤 K Platzoeder
- 👤 A Porst
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 18:28
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/211
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
154 words
A thyristor comprising a monolithic semiconductor device with at least four zones of alternate conductivity type; a first zone being a main emitter and an auxiliary emitter laterally spaced from each other, a second zone being a first base, and a third zone being a second base, a gate electrode in contact with said first base and spaced from said auxiliary emitter, an electrode in contact with said auxiliary emitter remote from said gate electrode and in contact with said first base, and an electrode in contact with said main emitter remote from said auxiliary emitter and in contact with said first base, said second base having an area below said gate electrode and out to a point inward of an outer edge of said auxiliary emitter having sufficient impurity concentration to provide a resistivity to said area about 10 to 30% lower than the resistivity of the remaining areas of said second base.
Claim 2
Dependent Claim
154 words
A thyristor comprising a monolithic semiconductor device with at least four zones of alternate conductivity type; a first zone being a main emitter and an auxiliary emitter laterally spaced from each other, a second zone being a first base, and a third zone being a second base, a gate electrode in contact with said first base and spaced from said auxiliary emitter, an electrode in contact with said auxiliary emitter remote from said gate electrode and in contact with said first base, and an electrode in contact with said main emitter remote from said auxiliary emitter and in contact with said first base, said second base having an area below said gate electrode and out to a point inward of an outer edge of said auxiliary emitter having sufficient impurity concentration to provide a resistivity to said area about 10 to 30% lower than the resistivity of the remaining areas of said second base.
Claim 3
Dependent Claim
34 words
A thyristor according to claim 1 in which the auxiliary emitter has a width up to 10 mm. and the low resistivity area of the second base has a width up to 16 mm.
Claim 4
Dependent Claim
166 words
A thyristor compriSing a semi-conductor member having at least four zones of alternate conductivity, a first zone being an emitter and an auxiliary emitter laterally spaced from each other, a second zone being a first base, a third zone being a second base, said emitter having an electrode thereon and said first base having a gate electrode thereon, said auxiliary emitter being positioned between said emitter and said gate electrode and electrically connected with said first base, said auxiliary emitter forming with said first base and said other zones an auxiliary thyristor, said second base having an area below said gate electrode and out to a point not beyond the location of the outer edge of said auxiliary emitter of a higher impurity concentration than the remaining areas of said second base, the specific resistivity of the higher impurity concentration area of the second base is at least 10 percent to 30 percent lower than the specific resistivity of the remaining portion of the second base.
Claim 5
Dependent Claim
166 words
A thyristor compriSing a semi-conductor member having at least four zones of alternate conductivity, a first zone being an emitter and an auxiliary emitter laterally spaced from each other, a second zone being a first base, a third zone being a second base, said emitter having an electrode thereon and said first base having a gate electrode thereon, said auxiliary emitter being positioned between said emitter and said gate electrode and electrically connected with said first base, said auxiliary emitter forming with said first base and said other zones an auxiliary thyristor, said second base having an area below said gate electrode and out to a point not beyond the location of the outer edge of said auxiliary emitter of a higher impurity concentration than the remaining areas of said second base, the specific resistivity of the higher impurity concentration area of the second base is at least 10 percent to 30 percent lower than the specific resistivity of the remaining portion of the second base.
Claim 6
Dependent Claim
161 words
A thyristor comprising a semi-conductor member having at least four zones of alternate conductivity, a first zone being an emitter and an auxiliary emitter laterally spaced from each other, a second zone being a first base, a third zone being a second base, said emitter having an electrode thereon and said first base having a gate electrode thereon, said auxiliary emitter being positioned between said emitter and said gate electrode and electrically connected with said first base, said auxiliary emitter forming with said first base and said other zones an auxiliary thyristor, said second base having an area below said gate electrode and out to a point not beyond the location of the outer edge of said auxiliary emitter of a higher impurity concentration than the remaining areas of said second base, the specific resistance of the higher impurity concentration area of the second base is approximately 25 percent under the specific resistivity of the remaining portion of said second base.
Claim 7
Dependent Claim
161 words
A thyristor comprising a semi-conductor member having at least four zones of alternate conductivity, a first zone being an emitter and an auxiliary emitter laterally spaced from each other, a second zone being a first base, a third zone being a second base, said emitter having an electrode thereon and said first base having a gate electrode thereon, said auxiliary emitter being positioned between said emitter and said gate electrode and electrically connected with said first base, said auxiliary emitter forming with said first base and said other zones an auxiliary thyristor, said second base having an area below said gate electrode and out to a point not beyond the location of the outer edge of said auxiliary emitter of a higher impurity concentration than the remaining areas of said second base, the specific resistance of the higher impurity concentration area of the second base is approximately 25 percent under the specific resistivity of the remaining portion of said second base.
Claim 8
Dependent Claim
186 words
A thyristor comprising a semi-conductor member having at least four zones of alternate conductivity, a first zone being an emitter and an auxiliary emitter laterally spaced from each other, a second zone being a first base, a third zone being a second base, said emitter having an electrode thereon and said first base having a gate electrode thereon, said auxiliary emitter being positioned between said emitter and said gate electrode and electrically connected with said first base, said auxiliary emitter forming with said first base and said other zones an auxiliary thyristor, said second base having an area below said gate electrode and out to a point not beyond the location of the outer edge of said auxiliary emitter of a higher impurity concentration than the remaining areas of said second base, the zones being doped, the doping concentration of the emitters being between 1018 and 1020 cm 3, the doping concentration of the first base being between 1016 and 1018 cm 3, and the doping concentration of the second base outside of said area of higher impurity concentration being between 1014 and 1016 cm 3.
Claim 9
Dependent Claim
186 words
A thyristor comprising a semi-conductor member having at least four zones of alternate conductivity, a first zone being an emitter and an auxiliary emitter laterally spaced from each other, a second zone being a first base, a third zone being a second base, said emitter having an electrode thereon and said first base having a gate electrode thereon, said auxiliary emitter being positioned between said emitter and said gate electrode and electrically connected with said first base, said auxiliary emitter forming with said first base and said other zones an auxiliary thyristor, said second base having an area below said gate electrode and out to a point not beyond the location of the outer edge of said auxiliary emitter of a higher impurity concentration than the remaining areas of said second base, the zones being doped, the doping concentration of the emitters being between 1018 and 1020 cm 3, the doping concentration of the first base being between 1016 and 1018 cm 3, and the doping concentration of the second base outside of said area of higher impurity concentration being between 1014 and 1016 cm 3.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-10-15 | 1977-04-16 | 1977-10-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-10-15 | 1981-04-16 | 1981-10-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-10-15 | 1985-04-16 | 1985-10-16 | $7700.00 | Window Closed / Lapsed |