Semiconductor avalanche diode
Abstract
Abstract A p+ p n n+ semiconductor diode comprises a disc of semiconductor material such as silicon with a bevelled edge, a carrier plate of molybdenum in contact with the outer, p+ zone and an axially centered annular electrode in contact with an annular n+ region of the n-doped zone. The radius of the opening within the annular electrode and the underlying n+ region is greater than that of a central cylindrical region of the semiconductor material which has the minimum specific resistance of the overall disc material, and the annular region of the semiconductor material which lies between the central cylindrical region of lowest specific resistance and the inner boundary of the annular n+ region has a resistance characteristic such that when a current flows through such annular region at which no destruction of the semiconductor material yet occurs in the event of avalanche breakdown, the voltage drop which is produced is equal to the difference between the breakdown voltage in the central region of lowest resistance where avalanche breakdown is started and the means breakdown voltage in the remaining part of the semiconductor disc.
Inventors
- 👤 Denis Clerc
- 👤 Dieter Zahn
Bibliographic Details
Claims Analysis
Total Claims: 1References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-05-09 | 1975-11-08 | 1976-05-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-05-09 | 1979-11-08 | 1980-05-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-05-09 | 1983-11-08 | 1984-05-09 | $7700.00 | Window Closed / Lapsed |