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Patent US3760241A successfully refreshed from Google Patents.
US3760241A
Expired / Lapsed
US
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Semiconductor device having a rectifying junction surrounded by a schottky contact
Assignee: Telefunken Electronic GmbH
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Filing: 1970-06-09
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Granted: 1973-09-18
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Expires: 1990-06-09
Abstract
Abstract A semiconductor device comprises a semiconductor body having a junction such as a metal to semiconductor contact or a p-n junction surrounded by a metal to semiconductor contact.
Inventors
- 👤 R Epple
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 17:21
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/64; A; A61; A61C; A61C13/00; A61C13/12; A61C13/18; H10D1/00; H10D1/40; H10D62/00; H10D62/10; H10D64/20; H10D99/00; H10P; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
83 words
A semiconductor device comprising: a semiconductor body, a rectifying junction extending to a surface of said semiconductor body, and a metal-to-semiconductor contact on said surface and surrounding said junction, said junction and said metal-tosemiconductor contact being laterally spaced from each other along said surface by a distance which is sufficiently short so that their charge free regions are superimposed whereby the field strength, and hence the possibility of an electrical breakthrough, at the edge of said junction close to said surface is reduced.
Claim 2
Dependent Claim
83 words
A semiconductor device comprising: a semiconductor body, a rectifying junction extending to a surface of said semiconductor body, and a metal-to-semiconductor contact on said surface and surrounding said junction, said junction and said metal-tosemiconductor contact being laterally spaced from each other along said surface by a distance which is sufficiently short so that their charge free regions are superimposed whereby the field strength, and hence the possibility of an electrical breakthrough, at the edge of said junction close to said surface is reduced.
Claim 3
Dependent Claim
17 words
A semiconductor device as defined in claim 1, wherein said junction is a metal to semiconductor contact.
Claim 4
Dependent Claim
15 words
A semiconductor device as defined in claim 1, wherein said junction is a p-n junction.
Claim 5
Dependent Claim
18 words
A semiconductor device as defined in claim 1, wherein said metal to semiconductor contact is a ring contact.
Claim 6
Dependent Claim
26 words
A semiconductor device as defined in claim 1, further comprising a second of said metal to semiconductor contacts disposed on said surface and surrounding said junction.
Claim 7
Dependent Claim
26 words
A semiconductor device as defined in claim 1 and comprising a plurality of said metal to semiconductor contacts disposed on said surface concentrically about said junction.
Claim 8
Dependent Claim
81 words
A semiconductor device comprising: a semiconductor body, a rectifying junction on a surface of said semiconductor body, a metal-to-semiconductor contact on said surface and surrounding said junction, said junction and said metal-to-semiconductor contact being laterally spaced from each other along said surface by a distance which is sufficiently short so that their charge free regions are superimposed whereby the field strength, and hence the possibility of an electrical breakthrough, at the edge of said junction close to said surface is reduced.
Claim 9
Dependent Claim
81 words
A semiconductor device comprising: a semiconductor body, a rectifying junction on a surface of said semiconductor body, a metal-to-semiconductor contact on said surface and surrounding said junction, said junction and said metal-to-semiconductor contact being laterally spaced from each other along said surface by a distance which is sufficiently short so that their charge free regions are superimposed whereby the field strength, and hence the possibility of an electrical breakthrough, at the edge of said junction close to said surface is reduced.
Claim 10
Dependent Claim
16 words
A semiconductor device as defined in claim 7, wherein said metal-to-semiconductor contact is a ring contact.
Claim 11
Dependent Claim
24 words
A semiconductor device as defined in claim 7, further comprising a second of said metal-to-semiconductor contact disposed on said surface and surrounding said junction.
Claim 12
Dependent Claim
24 words
A semiconductor device as defined in claim 7 and comprising a plurality of said metal-to-semiconductor contacts disposed on said surface concentrically about said junction.
References Cited (Backward Citations)
US3349297A
Cited
US3391287A
Cited
FR90984E
Cited
US3500144A
Cited
US3568011A
Cited
US3506893A
Cited
US3586542A
Cited
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US3571674A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-09-17 | 1977-03-19 | 1977-09-18 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-09-17 | 1981-03-19 | 1981-09-18 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-09-17 | 1985-03-19 | 1985-09-18 | $7700.00 | Window Closed / Lapsed |