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US3760241A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor device having a rectifying junction surrounded by a schottky contact

Assignee: Telefunken Electronic GmbH
•
Filing: 1970-06-09
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Granted: 1973-09-18
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Expires: 1990-06-09
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Abstract

Abstract A semiconductor device comprises a semiconductor body having a junction such as a metal to semiconductor contact or a p-n junction surrounded by a metal to semiconductor contact.

Inventors

  • 👤 R Epple

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 11:23
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/60; H10D64/64; A; A61; A61C; A61C13/00; A61C13/12; A61C13/18; H10D1/00; H10D1/40; H10D62/00; H10D62/10; H10D64/20; H10D99/00; H10P; H10P95/00; H10P95/50

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 83 words
A semiconductor device comprising: a semiconductor body, a rectifying junction extending to a surface of said semiconductor body, and a metal-to-semiconductor contact on said surface and surrounding said junction, said junction and said metal-tosemiconductor contact being laterally spaced from each other along said surface by a distance which is sufficiently short so that their charge free regions are superimposed whereby the field strength, and hence the possibility of an electrical breakthrough, at the edge of said junction close to said surface is reduced.
Claim 2
Dependent Claim 83 words
A semiconductor device comprising: a semiconductor body, a rectifying junction extending to a surface of said semiconductor body, and a metal-to-semiconductor contact on said surface and surrounding said junction, said junction and said metal-tosemiconductor contact being laterally spaced from each other along said surface by a distance which is sufficiently short so that their charge free regions are superimposed whereby the field strength, and hence the possibility of an electrical breakthrough, at the edge of said junction close to said surface is reduced.
Claim 3
Dependent Claim 17 words
A semiconductor device as defined in claim 1, wherein said junction is a metal to semiconductor contact.
Claim 4
Dependent Claim 15 words
A semiconductor device as defined in claim 1, wherein said junction is a p-n junction.
Claim 5
Dependent Claim 18 words
A semiconductor device as defined in claim 1, wherein said metal to semiconductor contact is a ring contact.
Claim 6
Dependent Claim 26 words
A semiconductor device as defined in claim 1, further comprising a second of said metal to semiconductor contacts disposed on said surface and surrounding said junction.
Claim 7
Dependent Claim 26 words
A semiconductor device as defined in claim 1 and comprising a plurality of said metal to semiconductor contacts disposed on said surface concentrically about said junction.
Claim 8
Dependent Claim 81 words
A semiconductor device comprising: a semiconductor body, a rectifying junction on a surface of said semiconductor body, a metal-to-semiconductor contact on said surface and surrounding said junction, said junction and said metal-to-semiconductor contact being laterally spaced from each other along said surface by a distance which is sufficiently short so that their charge free regions are superimposed whereby the field strength, and hence the possibility of an electrical breakthrough, at the edge of said junction close to said surface is reduced.
Claim 9
Dependent Claim 81 words
A semiconductor device comprising: a semiconductor body, a rectifying junction on a surface of said semiconductor body, a metal-to-semiconductor contact on said surface and surrounding said junction, said junction and said metal-to-semiconductor contact being laterally spaced from each other along said surface by a distance which is sufficiently short so that their charge free regions are superimposed whereby the field strength, and hence the possibility of an electrical breakthrough, at the edge of said junction close to said surface is reduced.
Claim 10
Dependent Claim 16 words
A semiconductor device as defined in claim 7, wherein said metal-to-semiconductor contact is a ring contact.
Claim 11
Dependent Claim 24 words
A semiconductor device as defined in claim 7, further comprising a second of said metal-to-semiconductor contact disposed on said surface and surrounding said junction.
Claim 12
Dependent Claim 24 words
A semiconductor device as defined in claim 7 and comprising a plurality of said metal-to-semiconductor contacts disposed on said surface concentrically about said junction.

References Cited (Backward Citations)

US3349297A Cited
US3391287A Cited
FR90984E Cited
US3500144A Cited
US3568011A Cited
US3506893A Cited
US3586542A Cited
US3550260A Cited
US3571674A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1976-09-17 1977-03-19 1977-09-18 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1980-09-17 1981-03-19 1981-09-18 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1984-09-17 1985-03-19 1985-09-18 $7700.00 Window Closed / Lapsed

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