Patent US3755017A successfully refreshed from Google Patents.
US3755017A
Expired / Lapsed
US
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Method of diffusing an impurity into a semiconductor body
Assignee: US Philips Corp
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Filing: 1972-01-10
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Granted: 1973-08-28
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Expires: 1992-01-10
Abstract
Abstract Method of diffusing vapor impurity into semiconductor body comprising providing impurity source and semiconductor body in separate open-ended vessels, inserting vessels in furnace and heating semiconductor body to diffusion temperature range before initiating diffusion on significant scale, and diffusing impurity into semiconductor body. Also, product made by method.
Inventors
- 👤 B Coughlin
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:10
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/10; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S252/00; Y10S252/95; Y10S252/951
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
35 words
A method as recited in claim 1, wherein said second vessel containing said impurity source is introduced into said furnace and heated to said diffusion temperature range prior to the step of connecting said vessels.
Claim 2
Dependent Claim
49 words
A method as recited in claim 1, wherein said first and second vessels are each of tubular configuration and have only one open end, the other end of each said vessel being closed, said open ends being substantially flat and said vessels being connected at their respective open ends.
Claim 3
Dependent Claim
92 words
A method as recited in claim 1, wherein said furnace comprises high and low temperature zones, said high temperature zone being maintained at a temperature level adapted to heat said semiconductor body to a temperature within said diffusion temperature range, said method further comprising the step of positioning at least one of said vessels at said low temperature zone prior to the introduction of said one vessel into said high temperature zone and maintaining a gas flow through said furnace within said low temperature zone so as to flush said one vessel.
Claim 4
Dependent Claim
63 words
A method as recited in claim 4, wherein said vessels respectively containing said semiconductor body and said impurity source are introduced into said furnace in a direction opposite that of said gas flow and positioned in said low temperature zone, said vessels being transferred from said low temperature zone to said high temperature zone in said direction opposite to said gas flow direction.
Claim 5
Dependent Claim
31 words
A method as recited in claim 1, wherein said furnace comprises a tub having at least one open end and said vessels are introduced into said furnace at said open end.
Claim 6
Dependent Claim
14 words
A method as recited in claim 1, wherein said semiconductor body is of silicon.
Claim 7
Dependent Claim
19 words
A method as recited in claim 1, wherein said impurity source is one of boron nitride and phosphorous nitride.
Claim 8
Dependent Claim
30 words
A method as recited in claim 1, wherein said second vessel containing said impurity source is heated to said diffusion temperature range prior to the step of connecting said vessels.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-27 | 1977-02-26 | 1977-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-27 | 1981-02-26 | 1981-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-27 | 1985-02-26 | 1985-08-28 | $7700.00 | Window Closed / Lapsed |