Patent US3755015A successfully refreshed from Google Patents.
US3755015A
Expired / Lapsed
US
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Anti-reflection coating for semiconductor diode array targets
Assignee: General Electric Co
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Filing: 1971-12-10
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Granted: 1973-08-28
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Expires: 1991-12-10
Abstract
Abstract A method is described for increasing the minority carrier collection efficiency of a semiconductor camera tube target structure by forming a region of increased conductivity and an anti-reflective coating simultaneously on the light-admitting surface of the target structure. For example, a doped glass is deposited to a quarter wavelength thickness and then heated to diffuse the dopant into the silicon substrate. The resultant is an n layer underlying a one quarter wavelength thick SiO2 antireflection coating.
Inventors
- 👤 R Redington
- 👤 S Blumenfeld
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 18:36
CPC Classifications
H; H10; H10D; H10D99/00; H01; H01J; H01J9/00; H01J9/20; H01J9/233; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/453; H01J29/455; H10P; H10P14/00; H10P14/60; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6342; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; Y; Y10; Y10S; Y10S148/00; Y10S148/026; Y10S148/039; Y10S148/043; Y10S148/115; Y10S148/118
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
22 words
The method as set forth in claim 1 in which said wafer is n-type silicon and said enhanced conductivity is n .
Claim 2
Dependent Claim
17 words
The method as set forth in claim 2 in which said doped galss comprises phosphorous doped glass.
Claim 3
Dependent Claim
22 words
The method as set forth in claim 3 in which said heating is carried out at approximately 900*C for approximately 15 minutes.
Claim 4
Independent Claim
80 words
A method of treating semiconductor camera targets to improve the quantum efficiency thereof comprising the steps of: depositing a doped glass on the light admitting surface of said target to a thickness of approximately one quarter wavelength at the received frequency of radiation at which reflection is minimized; and heating the target to diffuse the dopant from the glass to the target to form an enhanced conductivity layer for repelling portions of photon induced electron-hole pairs away from said layer.
Claim 5
Dependent Claim
42 words
The method as set forth in claim 5 wherein said target comprises n-type conductivity silicon, said dopant comprises phosphorous, said layer comprises n silicon, and said heating step comprises: heating said target to a temperature of about 900*C for approximately 15 minutes.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-27 | 1977-02-26 | 1977-08-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-27 | 1981-02-26 | 1981-08-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-27 | 1985-02-26 | 1985-08-28 | $7700.00 | Window Closed / Lapsed |