Abstract An epitaxial layer of a semiconductive material is deposited on a substrate in a furnace boat having a well and a cup-shaped piston fitting in the well with the piston having a small hole in its top end. A heated solution of the semiconductive material dissolved in a molten metal solvent is provided in the well. The piston is pressed down against the solution to force some of the solution through the hole in the piston onto the top end of the piston. As the solution passes through the hole in the piston the solution is scraped clean of contaminants. The substrate is placed against the cleaned portion of the solution on the top end of the piston and the solution is cooled to deposit an epitaxial layer of the semiconductive material onto the substrate.
The method in accordance with claim 1 in which the solution is forced through the hole in the wall by pressing the wall against the solution.
Claim 2
Dependent Claim
91 words
The method in accordance with claim 1 in which the deposition solution is formed by forming a first solution in said well and a second solution in a second well in said furnace boat, said first solution comprising a molten solvent having dissolved therein some of the ingredients of the material to be deposited, said second solution comprising a molten solvent having dissolved therein other ingredients of the material to be deposited and then mixing at least some of the second solution with the first solution to form the deposition solution.
Claim 3
Dependent Claim
46 words
The method in accordance with claim 3 in which the second solution is mixed with the first solution by forcing at least some of the second solution from the second well into the first well through a passage extending through the furnace boat between said wells.