Patent US3753804A successfully refreshed from Google Patents.
US3753804A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of manufacturing a semiconductor device
Assignee: US Philips Corp
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Filing: 1971-08-31
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Granted: 1973-08-21
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Expires: 1991-08-31
Abstract
Abstract The invention relates to a method of providing a low-resistance ohmic contact on an n-type AIIIBV semiconductor body, in which a doping layer from a metal and germanium is alloyed on the body. Upon cooling after alloying not only the germanium-doped AIIIBV compound separate but also germanium as such. It has been found that the contact resistance can be reduced if a donor for germanium is added to the doping layer as a result of which doped germanium is formed upon cooling after alloying.
Inventors
- 👤 R Tijburg
- 👤 Dongen T Van
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 22:55
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/83; H10H20/832; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10N; H10N80/00; H10N80/10; H10N80/107; H10P; H10P95/00; H10H20/81; H10H20/822; H10H20/824; Y; Y10; Y10S; Y10S148/00; Y10S148/018; Y10S148/02; Y10S438/00; Y10S438/90
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
18 words
A method as recited in claim 1, wherein said compound is one of gallium arsenide and gallium phosphide.
Claim 2
Dependent Claim
51 words
A method as recited in claim 1, wherein said cooling is carried out at a low rate in a heating apparatus adjusted such that the temperature distribution during cooling is such that said semiconductor body has a lower temperature than the adjacent alloy of the semiconductor material and the doping layer.
Claim 3
Dependent Claim
33 words
A method as recited in claim 1, wherein said donor impurity is arsenic and is present in said doping layer in an amount of from about 0.5 to about 2 percent by weight.
Claim 4
Dependent Claim
46 words
A method as recited in claim 1, wherein said doping layer contains from about 80 to about 88 percent by weight of gold, from about 12 to about 20 percent by weight of germanium and from about 0.5 to about 2 percent by weight of arsenic.
Claim 5
Dependent Claim
34 words
A method as recited in claim 1, wherein the residual part of said doping layer is removed subsequently to said cooling step and a metallic contact layer is then provided on the semiconductor material.
Claim 6
Dependent Claim
22 words
A method as recited in claim 1, wherein said metal of said doping layer is one of gold, silver, indium, and tin.
Claim 7
Dependent Claim
18 words
A method as recited in claim 1, wherein said donor impurity is one of phosphorus, arsenic, and antimony.
Claim 8
Dependent Claim
24 words
A method as recited in claim 1, wherein said donor impurity material is the same as the BV component of said AIII BV component.
Claim 9
Dependent Claim
33 words
A method as recited in claim 1, wherein said semiconductor body comprises an epitaxial surface layer of said n-conductivity type and said material and said alloying is carried out at said epitaxial layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-08-20 | 1977-02-19 | 1977-08-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-08-20 | 1981-02-19 | 1981-08-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-08-20 | 1985-02-19 | 1985-08-21 | $7700.00 | Window Closed / Lapsed |