Patent US3747016A successfully refreshed from Google Patents.
US3747016A
Expired / Lapsed
US
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Semiconductor injection laser
Assignee: RCA Corp
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Filing: 1971-08-26
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Granted: 1973-07-17
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Expires: 1991-08-26
Abstract
Abstract A semiconductor injection laser which emits a beam of radiation having improved beam divergence has a body of semiconductor material including a first region of one conductivity type, a second region of the opposite conductivity type and a third region of either conductivity type between the first and second regions and forming a PN junction with one of the first or second regions. The junctions between the third region and each of the first and second regions are heterojunctions which extend in substantially parallel relation to the edges of the body. The third region is of a thickness of between 0.2 and 0.3 microns and has an index of refraction which is no greater than about 0.05 higher than the index of refraction of each of the first and second regions so as to permit some of the light generated in the third region to spread out into each of the first and second regions.
Inventors
- 👤 H Kressel
- 👤 F Zygmunt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 07:40
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/32; H10; H10H; H10H20/00; H10H20/80
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
122 words
A semiconductor injection laser comprising a body of single crystalline semiconductor material having a first region of one conductivity type, a second region of a conductivity type opposite to that of the first region and a third region of either conductivity type between said first and second regions, the junctions between the third region and each of the first and second regions being heterojunctions which are substantially parallel and extending to an edge of said body, the third region being of a thickness of between 0.2 and 0.3 microns and having an index of refraction at the lasing wavelength which is slightly higher but no greater than 0.05 higher than the index of refraction of each of the first and second regions.
Claim 2
Dependent Claim
122 words
A semiconductor injection laser comprising a body of single crystalline semiconductor material having a first region of one conductivity type, a second region of a conductivity type opposite to that of the first region and a third region of either conductivity type between said first and second regions, the junctions between the third region and each of the first and second regions being heterojunctions which are substantially parallel and extending to an edge of said body, the third region being of a thickness of between 0.2 and 0.3 microns and having an index of refraction at the lasing wavelength which is slightly higher but no greater than 0.05 higher than the index of refraction of each of the first and second regions.
Claim 3
Dependent Claim
53 words
A semiconductor laser in accordance with claim 1 in which the third region contains both P type and N type dopants so as to be a compensated region but including more of one of the type dopants than of the other type dopant depending on the conductivity type desired for the third region.
Claim 4
Dependent Claim
41 words
The semiconductor injection laser in accordance with claim 2 in which the total concentration of the dopants in the third region is about 1019cm 3 and the difference of the dopant concentration between the two type dopants is about 1017cm 3.
Claim 5
Dependent Claim
26 words
The semiconductor injection laser in accordance with claim 3 in which the dopant concentration in each of the first and second regions is about 1018cm 3.
Claim 6
Dependent Claim
66 words
The semiconductor injection laser in accordance with claim 1 in which each of the first and second regions are of a semiconductor material having a band gap energy slightly higher than the band gap energy of the semiconductor material of the third region so as to provide the difference in the index of refraction between the third regions and each of the first and second regions.
Claim 7
Dependent Claim
47 words
The semiconductor injection laser in accordance with claim 5 in which the band gap energy of the semiconductor materials of each of the first and second regions is no greater than about 0.2eV higher than the band gap energy of the semiconductor material of the third region.
Claim 8
Dependent Claim
35 words
The semiconductor injection laser in accordance with claim 6 in which each of the first and second regions are of single crystalline gallium aluminum arsenide and the third region is of single crystalline gallium arsenide.
Claim 9
Dependent Claim
54 words
The semiconductor injection laser in accordance with claim 6 in which each of the first and second regions are of single crystalline gallium aluminum arsenide and the third region is of single crystalline gallium aluminum arsenide having a smaller content of aluminum than the semiconductor materials of each of the first and second regions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-07-16 | 1977-01-15 | 1977-07-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-07-16 | 1981-01-15 | 1981-07-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-07-16 | 1985-01-15 | 1985-07-17 | $7700.00 | Window Closed / Lapsed |