Stimulated emission semiconductor devices

Claim 1

A STIMULATED COHERENT EMISSION SEMICONDUCTOR DEVICE COMPRISING: A MONOCRYSTALLINE BODY OF A DIRECT TRANSITION COMPOUND SEMICONDUCTIVE MATERIAL; A FIRST REGION WITHIN SAID BODY HAVING DEGENERATE N-TYPE CONDUCTIVITY CHARACTERISTICS; A SECOND REGION WITHIN SAID BODY HAVING DEGENERATE P-TYPE CONDUCTIVITY CHARACTERISTICS; A THIRD REGION HAVING A THICKNESS NO GREATER THAN APPROXIMATELY TWICE THE LARGER OF THE TWO DIFFUSION LENGTHS FOR MINORITY CHARGE CARRIES IN THE RESPECTIVE N AND P-TYPE REGIONS, SAID THIRD REGION BEING LOCATED BETWEEN AND CONTIGUOUS WITH SAID FIRST AND SECOND REGIONS AND HAVING CONDUCTIVITY CHARACTERISTICS INTERMEDIATE THE CONDUCTIVITY CHARACTERISTICS OF SAID FIRST AND SECOND REGIONS; AT LEAST TWO SURFACE PORTIONS OF SAID BODY BEING EXACTLY PARALLEL WITH EACH OTHER, EXACTLY PERPENDICULAR TO SAID THIRD REGION AT THE INTERSECTION THEREWITH AND OF SUFFICIENTLY HIGH REFLECTIVITY TO PERMIT A STANDING WAVE OF ELECTROMAGNETIC ENERGY TO BE ESTABLISHED BETWEEN SAID TWO SURFACE PORTIONS THROUGH SUBSTANTIALLY SAID THIRD REGION; CONTACT MEANS MAKING NON-RECTIFYING ELECTRICAL CONTACT WITH EACH OF SAID FIRST AND SECOND REGIONS; AND MEANS FOR APPLYING A DIRECT CURRENT TO SAID BODY SUFFICIENT TO BIAS THE REGION BETWEEN SAID FIRST AND SECOND REGIONS IN THE FORWARD DIRECTION TO CAUSE A BAND-TO-BAND POPULATION INVERSION IN SAID INTERMEDIATE REGION AND THE EMISSION OF STIMULATED COHERENT RADIATION DUE TO BAND-TO-BAND TRANSITIONS THROUGH AT LEAST ONE OF SAID SURFACE PORTIONS.