High arrangement frequency scr gating

Claim 1

In a high power, high frequency semiconductor switching device adapted for connection between a voltage source and a load: a. an asymmetrically conductive semiconductor body having four layers of semiconductor material arranged in succession with contiguous layers being of different conductivity types; b. a pair of spaced-apart main load current carrying electrodes respectively connected to opposite end layers of said body; c. a first control point on one of said body layers for receiving triggering energy; d. a second control point on one of said body layers for receiving triggering energy, said second point being spaced from said first point; e. first periodically operative means coupled between one of said main electrodes and said first control point for supplying to said first control point relatively positive voltage pulses each of which is effective to initiate the flow of load current in one direction between said main electrodes through a first portion of said semiconductor body closely adjacent to said first control point, said current flow terminating after a preselected period of time; and f. second means coupled between said one of said main electrodes and said second control point and operative only after load current conduction through said first portion has terminated to supply to said second point relatively negative voltage pulses that enable load current to resume flowing in said one direction between said main electrodes through a second portion of said semiconductor body closely adjacent to said second control point, said second means being operative in repetitive sequence with the operation of said first means.