US3275909A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor switch
Assignee: General Electric Co
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Filing: 1963-12-19
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Granted: 1966-09-27
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Expires: 1983-12-19
Abstract
No abstract record available.
Inventors
- 👤 Frank W Gutzwiller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:13
CPC Classifications
H; H10; H10D; H10D18/00; H10D18/80
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
169 words
A BILATERAL CONTROLLABLE SEMICONDUCTOR SWITCHING DEVICE COMPRISING A BODY OF SEMICONDUCTOR MATERIAL INCLUDING FIVE LAYERS OF ONE AND THE OPPOSITE CONDUCTIVITY TYPES, LAYERS OF ONE CONDUCTIVITY TYPE BEING INTERLEAVED WITH LAYERS OF THE OPPOSITE CONDUCTIVITY TYPE FORMING A PLURALITY OF P-N JUNCTIONS THEREIN, A FIRST MAIN CURRENT CARRYING ELECTRODE IN LOW RESISTANCE OHMIC CONTACT WITH A SURFACE OF AN EXTERNAL LAYER OF SAID BODY AND AN EXPOSED SURFACE OF AN ADJACENT INTERMEDIATE LAYER, A SECOND MAIN CURRENT CARRYING ELECTRODE IN LOW RESISTANCE OHMIC CONTACT WITH A SURFACE OF THE OTHER EXTERNAL LAYER OF SAID BODY AND AN EXPOSED SURFACE OF AN ADJACENT INTERMEDIATE LAYER, A GATE REGION OF THE SAME CONDUCTIVITY TYPE AS SAID EXTERNAL LAYERS OF SAID BODY ADJACENT SAID INTERMEDIATE LAYER CONTACTED BY SAID FIRST MAIN CURRENT CARRYING ELECTRODE, AND GATING ELECTRODE MEANS IN OHMIC CONTACT WITH SAID GATE REGION AND WITH THE ADJACENT INTERMEDIATE LAYER TO PROVIDE FOR SWITCHING THE SEMICONDUCTOR DEVICE BETWEEN HIGH AND LOW IMPEDANCE STATES FOR CURRENT THROUGH SAID DEVICE IN OPPOSITE SENSES.
Claim 2
Dependent Claim
169 words
A BILATERAL CONTROLLABLE SEMICONDUCTOR SWITCHING DEVICE COMPRISING A BODY OF SEMICONDUCTOR MATERIAL INCLUDING FIVE LAYERS OF ONE AND THE OPPOSITE CONDUCTIVITY TYPES, LAYERS OF ONE CONDUCTIVITY TYPE BEING INTERLEAVED WITH LAYERS OF THE OPPOSITE CONDUCTIVITY TYPE FORMING A PLURALITY OF P-N JUNCTIONS THEREIN, A FIRST MAIN CURRENT CARRYING ELECTRODE IN LOW RESISTANCE OHMIC CONTACT WITH A SURFACE OF AN EXTERNAL LAYER OF SAID BODY AND AN EXPOSED SURFACE OF AN ADJACENT INTERMEDIATE LAYER, A SECOND MAIN CURRENT CARRYING ELECTRODE IN LOW RESISTANCE OHMIC CONTACT WITH A SURFACE OF THE OTHER EXTERNAL LAYER OF SAID BODY AND AN EXPOSED SURFACE OF AN ADJACENT INTERMEDIATE LAYER, A GATE REGION OF THE SAME CONDUCTIVITY TYPE AS SAID EXTERNAL LAYERS OF SAID BODY ADJACENT SAID INTERMEDIATE LAYER CONTACTED BY SAID FIRST MAIN CURRENT CARRYING ELECTRODE, AND GATING ELECTRODE MEANS IN OHMIC CONTACT WITH SAID GATE REGION AND WITH THE ADJACENT INTERMEDIATE LAYER TO PROVIDE FOR SWITCHING THE SEMICONDUCTOR DEVICE BETWEEN HIGH AND LOW IMPEDANCE STATES FOR CURRENT THROUGH SAID DEVICE IN OPPOSITE SENSES.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-09-26 | 1970-03-28 | 1970-09-27 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-09-26 | 1974-03-28 | 1974-09-27 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-09-26 | 1978-03-28 | 1978-09-27 | $7700.00 | Window Closed / Lapsed |