US3720835A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Scanning infrared radiation sensor
Assignee: United States Department of the Army
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Filing: 1967-02-24
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Granted: 1973-03-13
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Expires: 1987-02-24
Abstract
Abstract An infrared image is generated on an oscilloscope by sweeping a spot of short wavelength radiation across a P-N junction in doped germanium while applying voltage across a load resistor to the intensity modulation of an oscilloscope, the current passing through the load resistor being proportional to the intensity of infrared radiation incident on the P-type surface.
Inventors
- 👤 G Pruett
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 11:21
CPC Classifications
H; H01; H01J; H01J31/00; H01J31/08; H01J31/49; H10; H10F; H10F99/00; H10F55/00; H10F55/10
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
111 words
A radiation sensor including: a radiation detector comprising first, second, and third continuous semiconductor layers, said first layer being infrared transparent, said second layer being a high resistivity impurity photoconductor contacting said first layer, said third layer being a material of opposite conductivity type from said second layer, and making a broad area contact to form a photodiode with said second layer, bias means connected to said detector, means for directing radiation on said first layer of said detector, means for scanning said third layer of said detector with an energy beam capable of generating hole-electron pairs from the surface of said layer, and output means connected to said bias means.
Claim 2
Dependent Claim
111 words
A radiation sensor including: a radiation detector comprising first, second, and third continuous semiconductor layers, said first layer being infrared transparent, said second layer being a high resistivity impurity photoconductor contacting said first layer, said third layer being a material of opposite conductivity type from said second layer, and making a broad area contact to form a photodiode with said second layer, bias means connected to said detector, means for directing radiation on said first layer of said detector, means for scanning said third layer of said detector with an energy beam capable of generating hole-electron pairs from the surface of said layer, and output means connected to said bias means.
Claim 3
Dependent Claim
111 words
A radiation sensor including: a radiation detector comprising first, second, and third continuous semiconductor layers, said first layer being infrared transparent, said second layer being a high resistivity impurity photoconductor contacting said first layer, said third layer being a material of opposite conductivity type from said second layer, and making a broad area contact to form a photodiode with said second layer, bias means connected to said detector, means for directing radiation on said first layer of said detector, means for scanning said third layer of said detector with an energy beam capable of generating hole-electron pairs from the surface of said layer, and output means connected to said bias means.
Claim 4
Dependent Claim
111 words
A radiation sensor including: a radiation detector comprising first, second, and third continuous semiconductor layers, said first layer being infrared transparent, said second layer being a high resistivity impurity photoconductor contacting said first layer, said third layer being a material of opposite conductivity type from said second layer, and making a broad area contact to form a photodiode with said second layer, bias means connected to said detector, means for directing radiation on said first layer of said detector, means for scanning said third layer of said detector with an energy beam capable of generating hole-electron pairs from the surface of said layer, and output means connected to said bias means.
Claim 5
Dependent Claim
10 words
The sensor of claim 1 wherein said semiconductor is germanium.
Claim 6
Dependent Claim
31 words
The sensor of claim 1 or 2 wherein said first layer is germanium doped with an acceptor impurity with an activation energy small compared to the thermal energy at operating temperature.
References Cited (Backward Citations)
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1976-03-12 | 1976-09-11 | 1977-03-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1980-03-12 | 1980-09-11 | 1981-03-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1984-03-12 | 1984-09-11 | 1985-03-13 | $7700.00 | Window Closed / Lapsed |