US3283160A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photoelectronic semiconductor devices comprising an injection luminescent diode and a light sensitive diode with a common n-region
Assignee: International Business Machines Corp
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Filing: 1963-11-26
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Granted: 1966-11-01
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Expires: 1983-11-26
Abstract
No abstract record available.
Inventors
- 👤 Ralph S Levitt
- 👤 Weiser Kurt
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 14:53
CPC Classifications
H; H05; H05B; H05B33/00; H05B33/12; H05B33/14; H05B33/145; H10; H10F; H10F55/00; H10F55/10; H10F55/15; H10F55/155; H10H; H10H20/00; H10H20/80; H10P; H10P95/00
Claims Analysis
Total Claims: 1
Claim 1
Independent Claim
124 words
A BISTABLE ASYMMETRICALLY CONDUCTIVE DEVICE COMPRISING A WAFER ON N-TYPE GAAS HAVING BEEN DOPED WITH MN AS A DEEP LEVEL IMPURITY TO PROVIDE A HIGH IMPEDANCE REGION AND WITH ZN AS A SHALLOW LEVEL IMPURITY TO PROVIDE A LOW IMPEDANCE REGION, SAID DOPING PROVIDING TWO DIODES WHEREIN ONE DIODE IS A LIGHT-SENSITIVE NEGATIVE RESISTANCE DIODE HAVING A VOLTAGE THRESHOLD FOR SWITCHING IT FROM ITS HIGH IMPEDANCE CONDITION TO ITS LOW IMPEDANCE CONDITION CONSISTING OF A LOW IMPEDANCE REGION P WHERE THE MAIN IMPURITY IN THE GAAS IS ZN, A HIGH IMPEDANCE REGION P* WHERE THE MAIN IMPURITY IN THE GAAS IS MN AND THE N-TYPE GAAS REGION, AND SAID SECOND DIODE BEING AN INJECTION LUMINESCENT DIODE CONSISTING OF SAID N-TYPE GAAS REGION AND A
References Cited (Backward Citations)
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US3043959A
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US3064132A
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US3134905A
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-10-31 | 1970-05-02 | 1970-11-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-10-31 | 1974-05-02 | 1974-11-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-10-31 | 1978-05-02 | 1978-11-01 | $7700.00 | Window Closed / Lapsed |