US3134905A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Photosensitive semiconductor junction device
Assignee: AT&T Inc
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Filing: 1961-02-03
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Granted: 1964-05-26
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Expires: 1981-02-03
Abstract
No abstract record available.
Inventors
- 👤 William G Pfann
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 02:04
CPC Classifications
H; H10; H10F; H10F30/00; H10F30/20; H10F99/00; H10H; H10H20/00; H10H20/80; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
170 words
A SEMICONDUCTIVE TRANSLATING DEVICE COMPRISING A BODY HAVING A LOW RESISTIVITY REGION OF A FIRST TYPE EXTENDING SUBSTANTIALLY THROUGH THE BODY IN TWO DIMENSIONS, A HIGH RESISTIVITY REGION OF A SECOND CONDUCTIVITY TYPE ALSO EXTENDING SUBSTANTIALLY THROUGH THE SAID BODY IN THE SAID TWO DIMENSIONS AND FORMING A P-N JUNCTION WITH SAID FIRST REGION, THE SAID SECOND REGION BEING SITUATED AT A FREE SURFACE OF THE SAID BODY AND BEING OF SUCH THICKNESS THAT RADIATION IMPINGING ON THE SAID SURFACE RESULTS IN THE GENERATION OF HOLE-ELECTRON PAIRS, MEANS FOR APPLYING RADIATION TO SAID SECOND REGION, WHEREBY HOLE-ELECTRON PAIRS ARE GENERATED, A SUBSTANTIAL NUMBER OF WHICH ARE SEPARATED BY THE FIELD OF THE SAID JUNCTION, SAID SECOND REGION BEING INTERRUPTED OVER A LIMITED PORTION OF ITS FREE SURFACE BY A SECOND LOW RESISTIVITY REGION OF THE SAID SECOND CONDUCTIVITY TYPE TOGETHER WITH A PAIR OF ELECTRODES, THE FIRST ELECTRODE MAKING OHMIC CONTACT TO THE SAID SECOND LOW RESISTIVITY REGION AND THE SECOND ELECTRODE MAKING OHMIC CONTACT TO THE SAID FIRST REGION.
Claim 2
Dependent Claim
170 words
A SEMICONDUCTIVE TRANSLATING DEVICE COMPRISING A BODY HAVING A LOW RESISTIVITY REGION OF A FIRST TYPE EXTENDING SUBSTANTIALLY THROUGH THE BODY IN TWO DIMENSIONS, A HIGH RESISTIVITY REGION OF A SECOND CONDUCTIVITY TYPE ALSO EXTENDING SUBSTANTIALLY THROUGH THE SAID BODY IN THE SAID TWO DIMENSIONS AND FORMING A P-N JUNCTION WITH SAID FIRST REGION, THE SAID SECOND REGION BEING SITUATED AT A FREE SURFACE OF THE SAID BODY AND BEING OF SUCH THICKNESS THAT RADIATION IMPINGING ON THE SAID SURFACE RESULTS IN THE GENERATION OF HOLE-ELECTRON PAIRS, MEANS FOR APPLYING RADIATION TO SAID SECOND REGION, WHEREBY HOLE-ELECTRON PAIRS ARE GENERATED, A SUBSTANTIAL NUMBER OF WHICH ARE SEPARATED BY THE FIELD OF THE SAID JUNCTION, SAID SECOND REGION BEING INTERRUPTED OVER A LIMITED PORTION OF ITS FREE SURFACE BY A SECOND LOW RESISTIVITY REGION OF THE SAID SECOND CONDUCTIVITY TYPE TOGETHER WITH A PAIR OF ELECTRODES, THE FIRST ELECTRODE MAKING OHMIC CONTACT TO THE SAID SECOND LOW RESISTIVITY REGION AND THE SECOND ELECTRODE MAKING OHMIC CONTACT TO THE SAID FIRST REGION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-05-26 | 1967-11-25 | 1968-05-26 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-05-26 | 1971-11-25 | 1972-05-26 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-05-26 | 1975-11-25 | 1976-05-26 | $7700.00 | Window Closed / Lapsed |