Patent US3700979A successfully refreshed from Google Patents.
US3700979A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Schottky barrier diode and method of making the same
Assignee: RCA Corp
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Filing: 1971-04-07
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Granted: 1972-10-24
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Expires: 1991-04-07
Abstract
Abstract A Schottky barrier diode diode including a body of P type single crystalline silicon and a film of hafnium on a surface of the body and forming a surface barrier rectifying junction with the body. The diode has a barrier height of approximately 0.90 electron volts.
Inventors
- 👤 Arjun Nath Saxena
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 15:40
CPC Classifications
H; H10; H10D; H10D8/00; H10D8/60; H10D64/00; H10D64/60; H10D64/64; H10D99/00; H10P; H10P95/00
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
46 words
A method of making a Schottky surface barrier diode comprising coating at least a portion of a surface of a body of P type silicon semiconductor material with a film of hafnium metal to provide a surface barrier rectifying junction between said film and the body.
Claim 2
Dependent Claim
29 words
The method of claim 2 including the step of annealing the hafnium film in an atmosphere of dry helium at a temperature of between 450* C and 550* C.
Claim 3
Dependent Claim
24 words
The method of claim 3 including the step of cleaning the surface of the body prior to coating the surface with the hafnium film.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-24 | 1976-04-24 | 1976-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-24 | 1980-04-24 | 1980-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-24 | 1984-04-24 | 1984-10-24 | $7700.00 | Window Closed / Lapsed |