US3700976A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Insulated gate field effect transistor adapted for microwave applications
Assignee: Raytheon Co
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Filing: 1970-11-02
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Granted: 1972-10-24
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Expires: 1990-11-02
Abstract
Abstract Solid state field effect switch devices useful in microwave applications. Devices disclosed embody resistive noninsulative layer material insulated from a supporting semiconductor body. Electrodes connected to the layer material and the body are arranged so that signals applied to one electrode can, by field effect action, alter the electrical conductivity of a path within the device which extends between two other electrodes.
Inventors
- 👤 Hans G Dill
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:45
CPC Classifications
H; H10; H10D; H10D99/00; H10D30/00; H10D30/60
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
153 words
An insulated gate field effect transistor for switching microwave signals comprising, in combination: a. an intrinsic semiconductor substrate having a major surface; b. a doped region formed in said substrate whereby a channel region is defined; c. an insulating layer on said substrate surface over said channel region; d. a resistive gate layer located over said channel region and extending beyond to at least partially overlap said doped region; e. a pair of spaced electrodes located over said channel region, spaced from each other, in contact with said gate layer, and in non-overlapping relationship with respect to said doped region; f. means in contact with said resistive gate layer for applying a control voltage to create a conductive inversion layer in said channel region; g. means in ohmic contact with said doped region for injecting carriers into said channel region; and h. means for providing an output across said pair of spaced electrodes.
Claim 2
Dependent Claim
153 words
An insulated gate field effect transistor for switching microwave signals comprising, in combination: a. an intrinsic semiconductor substrate having a major surface; b. a doped region formed in said substrate whereby a channel region is defined; c. an insulating layer on said substrate surface over said channel region; d. a resistive gate layer located over said channel region and extending beyond to at least partially overlap said doped region; e. a pair of spaced electrodes located over said channel region, spaced from each other, in contact with said gate layer, and in non-overlapping relationship with respect to said doped region; f. means in contact with said resistive gate layer for applying a control voltage to create a conductive inversion layer in said channel region; g. means in ohmic contact with said doped region for injecting carriers into said channel region; and h. means for providing an output across said pair of spaced electrodes.
Claim 3
Dependent Claim
21 words
The transistor of claim 1 wherein the resistivity of said resistive gate layer is in excess of 1,000 ohms per square.
Claim 4
Dependent Claim
13 words
The transistor of claim 1 wherein said pair of spaced electrodes are interdigitated.
Claim 5
Dependent Claim
24 words
The transistor of claim 1 wherein said means in contact with said resistive layer includes a selected one of said pair of spaced electrodes.
Claim 6
Dependent Claim
48 words
The transistor of claim 4 wherein said means for injecting carriers includes a control electrode capacitively coupled to the non-selected one of said pair of spaced electrodes and said means for providing an output includes said control electrode and said selected one of said pair of spaced electrodes.
References Cited (Backward Citations)
US3258663A
Cited
US3304469A
Cited
US3328601A
Cited
US3378688A
Cited
US3313959A
Cited
US3475234A
Cited
US3528168A
Cited
US3514676A
Cited
US3634702A
Cited
US3562608A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1975-10-24 | 1976-04-24 | 1976-10-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1979-10-24 | 1980-04-24 | 1980-10-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1983-10-24 | 1984-04-24 | 1984-10-24 | $7700.00 | Window Closed / Lapsed |